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K30N60 MC9S1 FDP060AN C091P 48VDC KEL314 TMP82C5 N511413
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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...ated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * 275V, 250V DC Rated - 120V AC Line System Operation * Related Literature - TB334 "Guidelines for Soldering Surf...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    SQM120N06-06-15

Vishay Siliconix
Part No. SQM120N06-06-15
OCR Text ...om/doc?99912 notes a. package limited. b. pulse test; pulse width 300 s, duty cycle 2 %. c. when mounted on 1" square pcb (fr4 material). d. parametric verification ongoing. product summary v ds (v) 60 r ds(on) ( ) at v gs = 10 ...
Description    Automotive N-Channel 60 V (D-S) 175 °C MOSFET

File Size 204.33K  /  11 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...ain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 320 230 160 1360 330 2.2 20 630 1050 See Fig.12a,12b,15,16 -55 to...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...ain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 280 200 75 1080 330 2.2 20 670 1160 See Fig.12a,12b,15,16 -55 to ...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF2805L IRF2805S

IRF[International Rectifier]
Part No. IRF2805L IRF2805S
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.08mH RG = 25, IAS = 104A. (See Figure 12). S ISD 104A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 221.43K  /  11 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 370H RG = 25, IAS = 43A, VGS=10V (See Figure 12) ISD 43A, di/dt 300A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ... Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. Starting TJ = 25C...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text ...ain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Max. 170 120 75 680 330 2.2 20 300 690 See Fig.12a,12b,15,16 -55 to + ...
Description AUTOMOTIVE MOSFET 汽车MOSFET
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 359.66K  /  12 Page

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    Infineon Technologies A...
Part No. PTFA080551EV4R250
OCR Text ...0551e ptfa080551f confidential, limited internal distribution description the ptfa080551e and ptfa080551f are 55-watt ldmos fets designed for edge and cdma power amplifier applications in the 869 to 960 mhz band. features include input matc...
Description    Thermally-Enhanced High Power RF LDMOS FETs

File Size 4,436.53K  /  11 Page

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ...ain Current, VGS @ 10V (Silicon limited) Continuous Drain Current, VGS @ 10V (See Fig.9) Continuous Drain Current, VGS @ 10V (Package limited) Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Puls...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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