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				Anaren Microwave
Part No.	X3C26P1-30S14
OCR Text	...nterface temperature approaches th e maximum continuous operating temperature, the power handlingdecreasestozero. if mounting temperature is greater than 95 c, xinger couplerwillperformreliablyaslongastheinput poweris deratedtothecurveab...
Description	30 dB Directional Coupler
File Size	673.04K / 23 Page	View it Online	Download Datasheet

				Toshiba
Part No.	TPCA8087
OCR Text	...= 30 v) (4) enhancement mode: v th = 1.3 to 2.3 v (v ds = 10 v, i d = 1.0 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1, 2, 3: source 4: ...
Description	Field Effect Transistor
File Size	280.88K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Volta...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3717
OCR Text	...eter BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate...
Description	HEXFETPower MOSFET
File Size	246.14K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPP04CN10NG IPB04CN10NG IPI04CN10NG
OCR Text	...(BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=80 V, V GS=0 V, T j=25 C V DS=80 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A...
Description	OptiMOS鈩? Power-Transistor
File Size	494.87K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPP048N12N3G
OCR Text	...(BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=230 A V DS=120 V, V GS=0 V, T j=25 C V DS=120 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g ...
Description	OptiMOS鈩? Power-Transistor
File Size	327.43K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPP048N06LG IPP048N06LG10 IPB048N06LG
OCR Text	...(BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=270 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A V GS=...
Description	OptiMOS Power-Transistor Features For fast switching converters and sync. rectification
File Size	409.44K / 10 Page	View it Online	Download Datasheet

For -th Found Datasheets File :: 95402 Search Time::1.578ms
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