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    2SJ278

Sanyo Semicon Device
Hitachi Semiconductor
Part No. 2SJ278
OCR Text ...ent Temperature Ta = 25 C -0.005 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -2.0 -10 V -6 V -4 V -1.0 Pulse Test -3 V -1.2 (A) -0.8 Typical Transfer Characteristics V DS = -10 V Pul...
Description Silicon P-Channel MOS FET

File Size 41.20K  /  8 Page

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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ... 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Forward Transfer Admittance vs. Drain Current Tc = -25 C 75 C 25 C 6 I D = -0.05 A 4 -0.2 A 2 -4 V -0.05, -0.1 A 0 -40 0.002 -0.01 -0.03 -0.1 -0.3 V DS = -10 V Pulse Test ...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ... 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 m Duty = 0.5 0.2 0.1 0.05 0.02 Single pulse PDM t 0.01 T Duty = t/T Rth (ch-c) = 6.25C/W 100 m 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area -30 -10 -5 -3 ID...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 Maximum Safe Operation Area 10 s 100 s 1 ms 600 I D (A) Channel Dissipation 400 Drain Current DC = (1 10 m sh s Op ot er ) at ion PW Operation in this area is limited by RDS(...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Operation in this area is limited by RDS(on) Mavimum Safe Operation Area 600 I D (A) Channel Dissipation 400 Drain Current DC = (1 10 m sh s Op ot er ) at ion PW ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

http://
HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Power vs. temperature Derating 400 *Pch (mW) 300 I D (A) 10 s 100 s 1 ms DC Operation in this area is limited by RDS(on) Channel Dissipation 200 Drain Current Op ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 *Pch (mW) 300 I D (A) 10 s 100 s 1 ms PW = 10 ms (1 shot) Power Dissipation 200 Drain Current 100 Operation in this area is limited by RDS(on) DC O pe t ra io n...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 -0.002 -0.001 Maximum Safe Operation Area 150 I D (A) Channel Dissipation Drain Current 100 DC Op PW 10 s 100 s 1 ms er at ion 50 = (1 10 m sh s ot ) Operat...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.71K  /  8 Page

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    2SJ588

HITACHI[Hitachi Semiconductor]
Part No. 2SJ588
OCR Text ... -0.2 -0.1 -0.05 -0.02 -0.01 -0.005 Power vs. Temperature Derating 400 Pch (mW) I D (A) 300 10 s 100 s 1ms,10 ms DC Operation in this area is limited by RDS(on) Power Dissipation 200 Drain Current Op er at ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 25.19K  /  5 Page

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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ... 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 m Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 6.25C/W 100 m 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area -100 -50 -30 200...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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