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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
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| Part No. |
MJE13003L-X-TA3-F-T MJE13003 MJE13003-TO-220 MJE13003-X-TA3-F-T
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| OCR Text |
...00 * Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100 Typical tc = 290ns @ 1A, 100 . * 700V Blocking Capability
APPLICATIONS
* Switc...017,F
MJE13003
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector-Emitter Voltage Collector-Emitter V... |
| Description |
NPN EPITAXIAL SILICON TRANSISTOR npn型外延硅晶体
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| File Size |
144.27K /
7 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MRF177
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| OCR Text |
...age Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25...017 0.015 0.013 0.012 0.012 0.012 0.012 0.017 0.027 0.056 0.090 0.049 0.031 0.024 0.019 0.018 0.017 ... |
| Description |
N-CHANNEL BROADBAND RF POWER MOSFET
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| File Size |
212.74K /
9 Page |
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it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRFG35003M6T1
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| OCR Text |
...pplications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE...017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 0.018 ... |
| Description |
MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
GALLIUM ARSENIDE PHEMT
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| File Size |
325.84K /
8 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRFG35010N
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| OCR Text |
...4 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 900 mW Power Gain -- 10 dB Efficiency -- 28% * 9 Watts P1dB @ 3.55 GHz * ...017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.018 0.017 0.017 0.017 ... |
| Description |
RF Power Field Effect Transistor
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| File Size |
181.50K /
12 Page |
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it Online |
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NANOAMP[NanoAmp Solutions, Inc.]
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| Part No. |
N04L163WC2AT2 N04L163WC2A N04L163WC2AB N04L163WC2AB2 N04L163WC2AT
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| OCR Text |
...low Page Mode operating current 0.8mA at 3.0V and 1s (Typical) * Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for inde...017 REV G ECN# 01-1268) The specifications of this device are subject to change without notice. For ... |
| Description |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 】 16 bit
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| File Size |
185.03K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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