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ST Microelectronics
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| Part No. |
STW14NB50
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| OCR Text |
0.40 w - 14a - to-247 powermesh ? mosfet preliminary data n typical r ds(on) = 0.40 w n extremely high dv/dt capability n 100% avalanc...345v r ds(on) static drain-source on resistance v gs = 10v i d =6.5 a 0.4 0.45 w i d(on) on stat... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
63.76K /
5 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB11NM60
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| OCR Text |
0.4 w -11a to-220/to-220fp/d 2 pak/i 2 pak mdmesh?power mosfet (*)limited only by maximum temperature allowed (1)i sd <11a, di/dt<400a/s, v ...345v r ds(on) static drain-source on resistance v gs =10v,i d = 5.5a 0.4 0.45 w symbol parameter tes... |
| Description |
N-CHANNEL PowerMESH MOSFET
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| File Size |
584.94K /
12 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STD7NB20
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| OCR Text |
0.3 w - 7a dpak/ipak powermesh? mosfet n typical r ds (on) = 0.3 w n extremely high dv/dt capability n 100% avalanche tested n very low in...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 3.5 a 0.30 0.40 w symbol parame... |
| Description |
N-CHANNEL MOSFET
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| File Size |
412.79K /
10 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STP5NB100 STP5NB100FP
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| OCR Text |
...s drain-source voltage (v gs = 0) 1000 v v dgr drain-gate voltage (r gs = 20 k w ) 1000 v v gs gate- source voltage 30 v i d drain current...345v r ds(on) static drain-source on resistance v gs = 10v, i d = 2.5 a 2.4 2.7 w symbol paramete... |
| Description |
N-CHANNEL 1000V - 2.4 OHM - 5A - TO-220/TO-220FP POWERMESH MOSFET
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| File Size |
328.05K /
9 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB20NM50 STB20NM50-1
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| OCR Text |
0.20 ? - 20a - to220/fp-d2pak-i2pak zener-protected supermesh? mosfet general features high dv/dt and avalanche capabilities 100% avala...345v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10 a 0.20 0.25 ? symbol paramete... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
435.25K /
16 Page |
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it Online |
Download Datasheet |
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STMicroelectronics N.V.
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| Part No. |
STH18NB40FI
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| OCR Text |
0.19 w - 18.4a to-247/isowatt218 powermesh ? mosfet preliminary data n typical r ds(on) = 0.19 w n extremely high dv/dt capability n ...345v r ds(on) static drain-source on resistance v gs = 10v i d = 9.2 a 0.19 0.26 w i d(on) on st... |
| Description |
N-Channel 400V-0.19Ω-18.4A- TO-247/ISOWATT218 PowerMESHTM MOSFET(N沟道MOSFET) N沟道400V -0.19Ω- 18.4A - TO-247/ISOWATT218 PowerMESHTM MOSFET的（不适用沟道MOSFET的）
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| File Size |
72.82K /
6 Page |
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it Online |
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Price and Availability
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