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  0.53m Datasheet PDF File

For 0.53m Found Datasheets File :: 139    Search Time::7.437ms    
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    Pan Jit International I...
Part No. PJA3402
OCR Text ...thod 2026 ? approx. weight : 0.0003 ounces, 0.0084 grams ? marking : a02 parameter symbol limit units drain-source voltage v ds 30 v gate-source voltage v gs + 12 v continuous drain current i d 4.4 a pulsed drain current ...
Description 30V N-Channel Enhancement Mode MOSFET

File Size 204.04K  /  6 Page

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    DMC1017UPD DMC1017UPD-13 DMC1017UPD-15

Diodes Incorporated
Part No. DMC1017UPD DMC1017UPD-13 DMC1017UPD-15
OCR Text 0 1 of 9 www.diodes.com april 2014 ? diodes incorporated dmc1017upd complementary pair enh ancement mode mosfet powerdi ? 5060-8...53m ? @ v gs = -2.5v -5.4a description and applications this new generation complementary pai...
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI?5060-8
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI5060-8

File Size 441.29K  /  9 Page

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    BCP54M BCP54MBCP56M BCP55M BCP56M Q62702-C2595 Q62702-C2607 Q62702-C2606

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BCP54M BCP54MBCP56M BCP55M BCP56M Q62702-C2595 Q62702-C2607 Q62702-C2606
OCR Text ...55M BCP 56M 45 60 80 100 20 250 0.5 1 V I C = 10 mA, I B = 0 Collector-base breakdown voltage V(BR)CBO BCP 54M BCP 55M BCP 56M 45 60 100 I C = 100 A, IB = 0 Emitter-base breakdown voltage V(BR)EBO I CBO I CBO hFE hFE h...
Description    NPN Silicon AF Transistors (For AF driver and output stages High collector current)
From old datasheet system
NPN Silicon AF Transistors (For AF driver and output stages High collector current) 1 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 30.54K  /  4 Page

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    UTC606P-H UTC606PG-AG6-R

Unisonic Technologies
Part No. UTC606P-H UTC606PG-AG6-R
OCR Text ... th ) v ds =v gs , i d =-250a -0.4 -0.5 -1.5 v gate threshold voltage temperature coefficient j ) th ( gs t ? bv ? i d =-250a, referenced to 25c 2.5 mv/ c static drain-source on-state resistance r ds(on) v gs =-4.5v, i d =-6a ...
Description P-CHANNEL 1.8V TRENCH MOSFET

File Size 164.58K  /  3 Page

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    Alpha & Omega Semicondu...
Part No. AO4622 AO4622-10
OCR Text ... b repetitive avalanche energy 0.3mh b 13 25 ao4622 20v dual p + n-channel mosfet product summary n-channel p-channel v...53m w (v gs = -4.5v) < 30m w (v gs =4.5v) < 87m w (v gs = -2.5v) < 84m w (v gs =2.5v) 1...
Description 20V Dual P N-Channel MOSFET

File Size 252.78K  /  9 Page

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    CR32 CR43 CR5D11 CR54-4R4MC CR54-3R3MC CR54-5R6MC CR54-3R9MC CR54-2R7MC CR54-680KC CR54-150MC CR32-1R8MB CR32-151KC CR32

Sumida, Corp.
SUMIDA CORPORATION.
SUMIDA[Sumida Corporation]
Part No. CR32 CR43 CR5D11 CR54-4R4MC CR54-3R3MC CR54-5R6MC CR54-3R9MC CR54-2R7MC CR54-680KC CR54-150MC CR32-1R8MB CR32-151KC CR32-391KC CR32-181KC CR32-1R0MC
OCR Text ...TRUCTION 3.0MAX. 1 3.1 2.0 2 1 3.3 1.8 2 1 2 3.8MAX. 2.3 1.8 4.0 4 3 4 4 3 3 BOTTOM VIEW Solder Resist ...53m) 1.55 2.00 26.0m 3.44 85m 91m 1.50 1.32 63.7m 1.95 57m( 45m) 1.70 2.20 23.4m 3.84 72m 78m Rated ...
Description 1 ELEMENT, 1 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 390 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 1.8 uH, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR POWER 15UH 1.30A SMD 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR POWER 68UH 0.61A SMD 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR POWER 2.7UH 3.44A SMD 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR POWER 3.9UH 3.00A SMD 1 ELEMENT, 3.9 uH, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR POWER 5.6UH 2.48A SMD 1 ELEMENT, 5.6 uH, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR POWER 3.3UH 3.20A SMD 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR POWER 4.4UH 2.80A SMD 1 ELEMENT, 4.4 uH, GENERAL PURPOSE INDUCTOR, SMD
XCCCPOWER INDUCTORS
XCCCPOWER INDUCTORS Type
1 ELEMENT, 180 uH, GENERAL PURPOSE INDUCTOR, SMD

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    HITK0303MP-13 HITK0303MPTL-HQ

Renesas Electronics Corporation
Part No. HITK0303MP-13 HITK0303MPTL-HQ
OCR Text ...hannel dissipation pch note2 0.8 w channel temperature tch 150 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. when using the glass epoxy board (fr-4: 40 ? 40 ? 1 mm) r07ds0...
Description Silicon N Channel MOS FET Power Switching
   Silicon N Channel MOS FET Power Switching

File Size 98.22K  /  7 Page

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