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3N60C HD710PRO MDT2907A 000MT MA170 ICL232 PTC60 1N475
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  0.8a Datasheet PDF File

For 0.8a Found Datasheets File :: 16779    Search Time::3.016ms    
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    FD6-10 FD6-12 FD6-120 FD6-16 FD6-20 FD6-24 FD6-28 FD4-120 FD4-48 FD4-28 FD4-20 FD4-24 FD4-56 FD4-16 FD4-10 FD4-36 FD6-36

TRIAD MAGNETICS
Part No. FD6-10 FD6-12 FD6-120 FD6-16 FD6-20 FD6-24 FD6-28 FD4-120 FD4-48 FD4-28 FD4-20 FD4-24 FD4-56 FD4-16 FD4-10 FD4-36 FD6-36 FD6-48 FD6-56 F4-16 F4-20 F4-56 F4-36 F4-24 F4-12 F4-10 F4-120 F4-28 F4-48 FD8-16 FD8-24 FD8-28 FD8-56 FD8-20 FD8-10 F6-120 F6-56 F6-28 F6-24 F3-48 F3-28 F3-36 F3-120 F3-56 F5-120 F5-48 F5-56 FD5-10 FD5-12 FD5-16 FD5-20 FD5-24
OCR Text .../60 hz output v o lt age: 12 0.0vct@0.5a constructi on: s p lit bobbing non con c entri c win d ing eli m inates co stly electrost...8a f5-20 fd5-20 20.0v ct @ 0.6a c f5-24 fd5-24 12.0 24.0v ct @ 0.5a f5-28 fd5-28 28.0v ct @ 0.42a f5...
Description Power Transformer Chassis Mount Quick Pack
   Power Transformer Chassis Mount Quick Pack

File Size 201.45K  /  3 Page

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    AP02N70EJ

Advanced Power Electronics Corp.
Part No. AP02N70EJ
OCR Text ...on-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua dr...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 105.19K  /  5 Page

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    AP02N70EJ-HF AP02N70EJ-HF14

Advanced Power Electronics Corp.
Part No. AP02N70EJ-HF AP02N70EJ-HF14
OCR Text ...on-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua dr...
Description ESD Improved Capability
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 55.23K  /  4 Page

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    AP02N70EI-HF AP02N70EI-HF14

Advanced Power Electronics Corp.
Part No. AP02N70EI-HF AP02N70EI-HF14
OCR Text ...on-resistance 3 v gs =10v, i d =0.8a - - 7 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =0.8a - 0.65 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 10 ua i g...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 55.75K  /  4 Page

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    MAX14871

Maxim Integrated Products
Part No. MAX14871
OCR Text ...end of data sheet. 19-7063; rev 0; 9/14 driver v dd sns pwm dir max 14871 gnd com m 1 m 2 en fault driver v dd v dd current regulation r se...8a t j = 25c 334 435 m t j = 125c 465 620 driver overload current limit i m_ol 3 a m1, m2 leakage ...
Description 4.5V to 36V Full-Bridge DC Motor Driver

File Size 390.89K  /  15 Page

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    AON2803

Alpha & Omega Semiconductors
Part No. AON2803
OCR Text ... p d t a =70c t a =25c t a =70c 0.95 -55 to 150 pulsed drain current c units parameter typ max c thermal characteristics a w -20 1.5 i d -3...8a forward transconductance diode forward voltage switching parameters i s =-1a,v gs =0v v ds =-5v, ...
Description 20V Dual P-Channel MOSFET

File Size 253.26K  /  5 Page

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    Advanced Power Electronics
Part No. 15N03GH
OCR Text ...5 to 150 linear derating factor 0.22 storage temperature range total power dissipation 28 -55 to 150 continuous drain current, v gs @ 10v 1...8a - - 80 m v gs =4.5v, i d =6a - - 100 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua ...
Description Search --To AP15N03GH

File Size 99.55K  /  6 Page

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    INCHANGE Semiconductor
Part No. BUX33
OCR Text ...resistance, junction to case 1.0 /w free datasheet http:/// inchange semiconductor ...8a; i b = 2a 1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 12a; i b = 3a ...
Description Silicon NPN Power Transistor

File Size 207.73K  /  2 Page

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