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1100a Datasheet PDF File

For 1100a Found Datasheets File :: 122 Search Time::2.766ms
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				Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
Part No.	DFM200PXM33-A000
OCR Text	... Conditions IF = 200A, dIF/dt = 1100a/s, VR = 1800V Min. Typ. 165 115 130 Max. Units A C mJ Tvj = 125C unless stated otherwise. Symbol Irr Qrr Erec Parameter Reverse recovery current Reverse recovery charge Reverse recovery energy Test C...
Description	Fast Recovery Diode Module Preliminary Information
File Size	152.30K / 7 Page	View it Online	Download Datasheet

				MSK[M.S. Kennedy Corporation]
Part No.	MSK4890H MSK4890 MSK4890E
OCR Text	... Surge Current (1/2 Cycle 60Hz) 1100a REGEN Diode Current (Continuous) 50A REGEN Diode Current Pulsed (1mS) 100A Case Isolation Voltage 2500V TST TJ TC -55C to +125C Storage Temperature Range 150C Junction Temperature Case Operating T...
Description	600V/300A SCR/REGEN PEM
File Size	786.88K / 5 Page	View it Online	Download Datasheet

				Powerex Power Semicondu...
Part No.	TAKC6011 TAKC6511 TAKC651103
OCR Text	...ample: takc651103dh is a 6500v-1100a scr with 200ma igt and 12 inch gate and cathode potential leads. part voltage rating voltage code current rating current code turn-off gate leads v drm -v rrm i tavg tq i gt takc 6500 65 1100 11 0 ...
Description	Phase Control Thyristor 1100 Amperes 6500 Volts
File Size	103.31K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu...
Part No.	QID1210007
OCR Text	...r = 1200v, i f = 75a, di/dt = 1100a/s 300 nc thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r ...
Description	Split Dual Si/SiC
File Size	518.90K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	IKQ100N60TA
OCR Text	...00v, i f =100.0a, di f /dt =1100a/s switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit igbtcharacteristic,at t vj =175c turn-on delay time t d(on) - 31 - ns rise time t r - 52 - ns turn-o...
Description	600V low loss switching series third generation
File Size	2,221.00K / 16 Page	View it Online	Download Datasheet

				ROHM
Part No.	SCT3030ALGC11
OCR Text	...i f = 27a, v r = 600v di/dt = 1100a/ m s - 26 - ns reverse recovery charge q rr 3 forward voltage v sd 3 v gs = 0v, i s = 27a - 3.2 - - 130 - nc peak reverse recovery current i rrm *3 - 10 - a 4/13 2016.04 - rev.a downloaded fro...
Description	N-channel Silicon Carbide Power MOSFET
File Size	452.13K / 14 Page	View it Online	Download Datasheet

				ROHM
Part No.	SCT3040KLGC11
OCR Text	...i f = 20a, v r = 600v di/dt = 1100a/ ? s -2 5-n s reverse recovery charge q rr 3 forward voltage v sd 3 v gs = 0v, i s = 20a - 3.2 - a inverse diode direct current,pulsed i sm *2 - - 137 a inverse diode continuous,forward current ...
Description	N-channel Silicon Carbide Power MOSFET
File Size	451.83K / 14 Page	View it Online	Download Datasheet

				ROHM
Part No.	SCT3030KL SCT3030KLC11
OCR Text	...i f = 27a, v r = 600v di/dt = 1100a/ m s - i s *1 t c = 25c - - - 27 - ns nc a min. typ. max. parameter symbol conditions values 4/13 2016.06 - rev.a downloaded from: http:/// sct3030kl l electrical characteristic curves 0 50 100...
Description	N-channel Silicon Carbide Power MOSFET
File Size	446.99K / 14 Page	View it Online	Download Datasheet

				ROHM
Part No.	SCT3080KL SCT3080KLC11
OCR Text	... i f =10a, v r = 600v di/dt = 1100a/ m s - 17 - ns reverse recovery charge forward voltage v sd 3 v gs = 0v, i s = 10a - 3.2 - peak reverse recovery current i rrm 3 - 6 - a q rr *3 - 50 - nc 4/13 2016.06 - rev.a downloaded from:...
Description	N-channel Silicon Carbide Power MOSFET
File Size	443.72K / 14 Page	View it Online	Download Datasheet

For 1100a Found Datasheets File :: 122 Search Time::2.766ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 |