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12.2-12.8ghz Datasheet PDF File

For 12.2-12.8ghz Found Datasheets File :: 802 Search Time::2.641ms
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				Toshiba Semiconductor
Part No.	TB31356AFL
OCR Text	...e : QON16pin(0.65mm pitch) LPF 12 STB DATA CLK BS-PLL1 13 14 15 16 64/65 PLL1 11 10 VCC-PLL2 9 8 7 6 5 4 VCC-PLL1 QON16-P-0404-0.65 Weig...2 3 LPF 000630EBA1 * TOSHIBA is continually working to improve the quality and reliability ...
Description	1.8GHz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER
File Size	294.71K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... ETC INFINEON[Infineon Technologies AG]
Part No.	CFH800
OCR Text	...3 0.4705 -55.8 0.5 0.8069 -66.9 12.5367 133.1 0.0606 58.9 0.4496 -67 0.6 0.7669 -78 11.5987 126 0.0687 54.3 0.4276 -77.2 0.7 0.7328 -87.8 10.7466 119.8 0.0753 51.6 0.4104 -86 0.8 0.7028 -97.3 9.9389 114.3 0.0793 49.2 0.391 -94.7 0.9 0.6782 ...
Description	Typical Common Source S - Parameters
File Size	71.94K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semic... UMS[United Monolithic Semiconductors]
Part No.	CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text	...6 39 38 Typ 9.4 16 18 -0.035 12 12 40 39 -0.01 39 38 35 32 9 2.4 5.5 350 Max 10.4 Unit GHz dB dB dB/C dB dB dBm dBm dB/C dBm dBm % % V A V Ohm C 38 37 30 27 -30 +80 (1) This parameter is fixed by Vctr (2) This value cor...
Description	X-band GaInP HBT High Power Amplifier
File Size	156.54K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	... 5V 3V 2V G 15 14 G 12 11 10 13 12 11 10 9 8 1V 9 8 0.7V 7 6 5 4 3 1V 0.7V 7 6 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 IC 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 IC Semiconductor Group ...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS482 Q62702-F1573
OCR Text	...power dissipation Symbol Values 12 20 20 2 35 4 mW 250 150 - 65 ... + 150 - 65 ... + 150 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg TS 81 C Junction temperature Ambient temperature Storage temperature Thermal Resistance J...
Description	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.) From old datasheet system
File Size	53.54K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Sanyo Electric Co., Ltd.
Part No.	EC3H04C 1224
OCR Text	...mA, f=2GHz 4 100 6 8 1.1 0.85 5 12 1.7 2.5 1.5 Conditions Ratings min typ max 1.0 10 180 GHz pF pF dB dB dB Unit A A Any and all SANYO products described or contained herein do not have specifications that can handle applications that re...
Description	NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications From old datasheet system High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
File Size	33.74K / 6 Page	View it Online	Download Datasheet

				Maxim
Part No.	MAX2645
OCR Text	...AIN = GND GAIN = VCC GAIN = GND 12 3.6 0.1 2 A V V A CONDITIONS MIN 3.0 9.2 2.7 TYP MAX 5.5 10.9 3.9 11.6 4.0 mA UNITS V 2 _______________________________________________________________________________________ 3.4GHz to 3.8GHz SiG...
Description	3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver From old datasheet system
File Size	263.98K / 12 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. Maixm
Part No.	MAX3866 MAX3866E_D MAX3866E/D
OCR Text	...(differential) 100 145 VCCD - 0.12 90 VCCD - 0.1 CONDITIONS MIN TYP 50 0.84 105 MAX 73 0.95 120 VCCD 0.4 UNITS mA V V V mVp-p V AC ELECT...2) PARAMETER Small-Signal Bandwidth Input Sensitivity Input-Referred RMS Noise Low-Frequency Cutoff ...
Description	2.5Gbps, 3.3V Combined Transimpedance/Limiting Amplifier
File Size	198.65K / 12 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	SA620DK SA620
OCR Text	...ND 14 MIXER BYPASS 13 MIXER OUT 12 OSC GND 11 VCO OUT * Outstanding noise figure: 1.6dB for the amplifier and 9dB for the mixer at 900MH...2 LNA GND 3 LNA IN 4 LNA GND 5 LNA GND 6 OSC GND 7 MIXER PWRDN 8 OSC PWRDN ...
Description	Low voltage LNA mixer and VCO - 1GHz Low voltage LNA, mixer and VCO - 1GHz
File Size	330.13K / 11 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	CLY15 Q62702-L99
OCR Text	... VDS VDG VGS ID TCh Tstg Ptot 9 12 -6 5 150 -55...+150 4.7 Unit V V V A C C W Thermal resistance Channel-soldering point (GND) RthC...2.4 -3.8 typ 3.2 20 -2.8 max 4.8 400 70 -1.8 Unit A A A V dB IDSS ID Cut-off current ...
Description	GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管（功率放大器，对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
File Size	59.12K / 7 Page	View it Online	Download Datasheet

For 12.2-12.8ghz Found Datasheets File :: 802 Search Time::2.641ms
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