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SamHop Microelectronics...
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| Part No. |
SP8009
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| OCR Text |
...v) total gate charge qg (nc) 15 12 9 6 3 0 50 40 30 20 10 0 048 12 16 20 24 28 32 gate threshold voltage vth (v) ambient temperature ta ( c ) drain power dissipation p d (w) 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 -80 80 40 -40 ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
77.42K /
6 Page |
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it Online |
Download Datasheet
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SamHop Microelectronics
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| Part No. |
SP8009E
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| OCR Text |
...v) total gate charge qg (nc) 15 12 9 6 3 0 50 40 30 20 10 0 048 12 16 20 24 28 32 gate threshold voltage vth (v) ambient temperature ta ( c ) drain power dissipation p d (w) 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 -80 80 40 -40 ... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.79K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
SP8009EL
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| OCR Text |
...v) total gate charge qg (nc) 15 12 9 6 3 0 50 40 30 20 10 0 048 12 16 20 24 28 32 gate threshold voltage vth (v) ambient temperature ta ( c ) drain power dissipation p d (w) 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 -80 80 40 -40 ... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
110.84K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
SP8008
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| OCR Text |
...v) total gate charge qg (nc) 15 12 9 6 3 0 50 40 30 20 10 0 0714 21 28 35 42 49 56 gate threshold voltage vth (v) ambient temperature ta ( c ) drain power dissipation p d (w) 2.5 2.0 1.5 1.0 0.5 0 0 40 80 120 160 -80 80 40 -40... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
109.93K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
SP8007
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| OCR Text |
...max. 0.70 0.75 0.25 0.30 0.10 0.15 3.25 3.35 3.00 3.10 1.78 1.88 0.13 3.20 3.30 3.00 3.15 0.80 0.35 0.25 3.45 3.20 1.98 3.40 3.20 e h l l1 m 2.39 2.49 0.65 bsc 0.30 0.39 0.30 0.40 0.13 10 o 2.59 0.50 0.50 12 o d d1 d3 e l1 m c a e1 e 0 d2 b... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
112.50K /
8 Page |
View
it Online |
Download Datasheet |
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SamHop Microelectronics...
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| Part No. |
SP8006
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| OCR Text |
...annel temperature i d = 6.25 a 15 v gs = 2.5 v 3.1 v 4.0 v 4.5 v 0 0 4 3 2 24 18 12 6 1 1.8 1.5 1.2 v gs = 0 v 3.7 v v dd = 5 v 12 v 20 v i d = 12.5 a 10 0.1 100 1000 100 10 1 v ds - drain to source voltage - v c iss , c oss , c rss ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
111.81K /
8 Page |
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it Online |
Download Datasheet |
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AMICCOM
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| Part No. |
A7533A
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| OCR Text |
...0.6 change pin definition jul, 15, 2008 0.7 modify typo of pin 14 and pin 16, add remark of application ckt. jul, 08, 2009 0.8 modify pin ...ohm systems. switch outputs (op1 & op2) can be independently selected from any of the four inputs (h... |
| Description |
4X2 Switch Matrix
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| File Size |
585.25K /
18 Page |
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it Online |
Download Datasheet |
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