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  180.175 Datasheet PDF File

For 180.175 Found Datasheets File :: 22093    Search Time::1.765ms    
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    ONSEMI[ON Semiconductor]
Part No. NTD3055-150T4G NTD3055-150 NTD3055-150-1 NTD3055-150-1G NTD3055-150G NTD3055-150T4
OCR Text ...0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01...
Description Power MOSFET 9.0Amps, 60Volts N-Channel DPAK(9.0A, 60V锛????锛?PAK灏???????OSFET)
Power MOSFET 9.0Amps, 60Volts N-Channel DPAK(9.0A, 60VN通道,DPAK封装的功率MOSFET)
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:15; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
Power MOSFET 9.0 A, 60 V 9 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 67.49K  /  8 Page

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    PA42A PA41 PA41A PA42

Cirrus Logic
APEX[Apex Microtechnology]
Part No. PA42A PA41 PA41A PA42
OCR Text ...ceramic SIP10 package. PIEZO 180 TRANSDUCER 180 100 100 330pF 330pF -175 LOW COST 660V p-p PIEZO DRIVE -175 Two PA41/42 amplifiers operated as a bridge driver for a piezo transducer provides a low cost 660 volt total drive ...
Description HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS

File Size 109.72K  /  4 Page

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    PH1955L

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PH1955L
OCR Text ...Figure 11 18 5 8 1494 217 86 18 180 44 134 0.85 52 38 1992 260 118 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC 16.3 14.3 19 40 21 17.3 m m m m...175 C 25 C 0 0 5 10 15 QG (nC) 20 0 0 1 2 3 VGS (V) 4 ID = 25 A; VDD = 14 V and 44 V ...
Description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
From old datasheet system

File Size 67.18K  /  12 Page

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    PHB125N06LT

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHB125N06LT
OCR Text ...Tmb / C 120 140 160 180 1E-05 1E-03 t/s 1E-01 1E+01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(...175 25 1 0.5 0 0 1 VGS/V 2 3 4 0 -100 -50 0 50 Tj / C 100 ...
Description TrenchMOS transistor Logic level FET

File Size 69.57K  /  8 Page

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    PHB125N06T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHB125N06T
OCR Text ...Tmb / C 120 140 160 180 1E-05 1E-03 t/s 1E-01 1E+01 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(...175 20 25 2 1 0 0 1 2 3 VGS/V 4 5 6 7 0 -100 -50 0 50 Tj /...
Description TrenchMOS transistor Standard level FET

File Size 67.35K  /  8 Page

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    MTN9240J3

Cystech Electonics Corp.
Part No. MTN9240J3
OCR Text ...1 1.2 1.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v v ...175 200 t c , case temperature(c) i d , maximum drain current(a) cystech electronics co...
Description N-Channel Enhancement Mode Power MOSFET

File Size 258.32K  /  9 Page

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    BZD27 BZD27-C10 BZD27-C100 BZD27-C11 BZD27-C110 BZD27-C12 BZD27-C120 BZD27-C13 BZD27-C130 BZD27-C15 BZD27-C150 BZD27-C16

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. BZD27 BZD27-C10 BZD27-C100 BZD27-C11 BZD27-C110 BZD27-C12 BZD27-C120 BZD27-C13 BZD27-C130 BZD27-C15 BZD27-C150 BZD27-C16 BZD27-C160 BZD27-C18 BZD27-C180 BZD27-C20 BZD27-C200 BZD27-C22 BZD27-C220 BZD27-C24 BZD27-C240 BZD27-C27 BZD27-C270 BZD27-C30 BZD27-C300 BZD27-C33 BZD27-C330 BZD27-C36 BZD27-C360 BZD27-C39 BZD27-C390 BZD27-C3V6 BZD27-C3V9 BZD27-C43 BZD27-C430 BZD27-C47 BZD27-C470 BZD27-C4V3 BZD27-C4V7 BZD27-C51 BZD27-C510 BZD27-C56 BZD27-C5V1 BZD27-C5V6 BZD27-C62 BZD27-C68 BZD27-C6V2 BZD27-C6V8 BZD27-C75 BZD27-C7V5 BZD27-C82 BZD27-C8V2 BZD27-C91 BZD27-C9V1 BZD27_2 BZD27-C5V6/T1 BZD27-C75/T3 BZD27-C15/T3 BZD27-C18/T3 BZD27-C33/T1 BZD27-C200/T1 BZD27-C36/T1 BZD27C12 BZD27-C3V6T/R
OCR Text ...5 82 91 100 110 120 130 150 160 180 200 220 240 270 MAX. 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 233 256 289 DIFFERENTIAL TE...175 150 K/W K/W 55 30 K/W K/W CONDITIONS VALUE UNIT 1996 Jun 10 6 Philips Semiconductors ...
Description From old datasheet system
DIODE ZENER 5V6
Positive voltage regulators
5.0 AMP POSITIVE VOLTAGE REGULATOR
Voltage regulator diodes 5.1 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Voltage regulator diodes 6.8 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Voltage regulator diodes 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
12 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

File Size 37.97K  /  9 Page

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    PHB21N06T

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHB21N06T
OCR Text ...Tmb / C 120 140 160 180 0.01 1.0E-06 0.0001 t/s 0.01 1 100 Fig.1. Normalised power dissipation. PD% = 10...175 25 1 0 1 2 3 4 5 VGS/V 6 7 8 9 0 -100 -50 0 50 Tj / C ...
Description TrenchMOS transistor Standard level FET

File Size 68.62K  /  8 Page

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    PHB44N06LT

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHB44N06LT
OCR Text ... 85 70 64 2.5 7.5 MAX. 1700 300 180 32 125 95 85 UNIT S nC nC nC pF pF pF ns ns ns ns nH nH VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 ...175 2 25 3 VGS/V 4 5 6 0 -100 -50 0 50 Tj / C 100 150 200 Fig.7. Typical tra...
Description TrenchMOS transistor Logic level FET

File Size 68.47K  /  8 Page

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