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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
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| Part No. |
L6363
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| OCR Text |
...ion
DESCRIPTION L6363 is a 0.18m CMOS PRML R/W channel supporting data rates up to 750Mb/sec with Servo Demodulation, Clock Synthesis, Channel Quality Monitor for channel optimization and Disk Surface Defect Scan capability
s
SERVO... |
| Description |
PRML READ/WRITE CHANNEL
PRML READ/WRITE CHANNEL
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| File Size |
85.95K /
4 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
M5M5V5636GP-16
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| OCR Text |
...
The M5M5V5636GP is a family of 18M bit synchronous SRAMs organized as 524288-words by 36-bit. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Renesas's SRAMs are fabric... |
| Description |
Memory>Fast SRAM>Network SRAM
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
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| File Size |
684.36K /
18 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M5M5W816WG-85HI
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| OCR Text |
...itsubishi's high-perf ormance 0.18m CMOS technology . The M5M5W816 is suitable f or memory applications where a simple interf acing , batter...bit. These dev ices operate on a single +2.7~3.0V power supply , and are directly TTL compatible to ... |
| Description |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
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| File Size |
100.83K /
10 Page |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
M5M5W816WG-85HI M5M5W816WG M5M5W816WG-55HI M5M5W816WG-70HI
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| OCR Text |
...itsubishi's high-perf ormance 0.18m CMOS technology . The M5M5W816 is suitable f or memory applications where a simple interf acing , batter...BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
FUNCTION
The M5M5W816WG is organized as 524288-words... |
| Description |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
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| File Size |
152.18K /
10 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M5M5Y416CWG-70HI
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| OCR Text |
...itsubishi's high-perf ormance 0.18m CMOS technology . The M5M5Y416C is suitable f or memory applications where a simple interf acing , batte...bit. These dev ices operate on a single +1.65~2.3V power supply , and are directly TTL compatible to... |
| Description |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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| File Size |
86.05K /
10 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M5M5Y416CWG-85HI
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| OCR Text |
...itsubishi's high-perf ormance 0.18m CMOS technology . The M5M5Y416C is suitable f or memory applications where a simple interf acing , batte...BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
FUNCTION
The M5M5Y416CWG is organized as 262144-wo... |
| Description |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
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| File Size |
81.16K /
9 Page |
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it Online |
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MICRON[Micron Technology]
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| Part No. |
MT28C6428P20 MT28C6428P18
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| OCR Text |
...Voltage, Extended Temperature 0.18m Process Technology
BALL ASSIGNMENT 67-Ball FBGA (Top View)
1 A B C D E F G H
NC NC NC
2
NC
3...bit chip protection registers for security purposes * PROGRAM/ERASE cycles 100,000 WRITE/ERASE cycle... |
| Description |
FLASH AND SRAM COMBO MEMORY
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| File Size |
542.69K /
48 Page |
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it Online |
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MICRON[Micron Technology]
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| Part No. |
MT28F321P20 MT28F321P18
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| OCR Text |
18m Process Technology
FEATURES
* Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a du...bit chip protection registers for security purposes * Cross-compatible command support Extended comm... |
| Description |
FLASH MEMORY
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| File Size |
365.32K /
35 Page |
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it Online |
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NJRC[New Japan Radio]
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| Part No. |
NJU6824
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| OCR Text |
... :43m(Min) :14.0~22.5m (Typical 18m) <tolerance : 3m > :Au
Bump Pitch Bump Height Bump Material
Alignment marks a: 30m b: 6m c: 120m d...bit
D15 D14 D13 D12 D11 D10 D8 D7 D6 D5 D4/SPOL D3/SMODE D2 D1/SDA D0/SCL Pole Control I/O Buffer... |
| Description |
128-common x (128+2) RGB-Segment, in 4096-Color STN LCD DRIVER
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| File Size |
967.89K /
110 Page |
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it Online |
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Price and Availability
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