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  2.5-w ch Datasheet PDF File

For 2.5-w ch Found Datasheets File :: 24440    Search Time::2.766ms    
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    2SK3025 2SK3025TENTATIVE

PANASONIC[Panasonic Semiconductor]
Panasonic Corporation
Part No. 2SK3025 2SK3025TENTATIVE
OCR Text ...unit: mm 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 s Applications 2.50.1 0.8max 0.930.1 1.00.1 0.10.05 0.50.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain curre...
Description Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset
Silicon N-channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.15K  /  1 Page

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    2SK3026

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3026
OCR Text ...eakdown voltage unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a...5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 s Absolute Maximum Ratings (TC...
Description Silicon N-channel Power F-MOS FET

File Size 23.46K  /  1 Page

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    2SK3027

PANASONIC[Panasonic Semiconductor]
Part No. 2SK3027
OCR Text ...eakdown voltage unit: mm 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip 13.7-0.2 q Contactless relay q Diving circuit for a...5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 s Absolute Maximum Ratings (TC...
Description Silicon N-channel Power F-MOS FET

File Size 23.49K  /  1 Page

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    2SK3028 2SK3028TENTATIVE

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3028 2SK3028TENTATIVE
OCR Text ...ent q Switching power supply 2.0 1.2 5 4.0 2.00.2 1.10.1 2.0 5 5 0.70.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP...
Description Silicon N-channel Power F-MOS FET

File Size 24.42K  /  1 Page

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    2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE

Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORATION-2SK3029TENTATIVE
OCR Text ...unit: mm 6.50.1 5.30.1 4.350.1 2.30.1 0.50.1 s Applications 2.50.1 0.8max 0.930.1 1.00.1 0.10.05 0.50.1 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain curre...
Description Silicon N-channel Power F-MOS FET 5000 mA, 100 V, N-chANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

File Size 23.26K  /  1 Page

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    2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text ...tes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject...5.0 A VGS = 10 V, ID = 5.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 150 V, ID = 5.0 A VGS(on) = 10 V R...
Description Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET

File Size 76.83K  /  8 Page

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    2SK740

HITACHI[Hitachi Semiconductor]
Part No. 2SK740
OCR Text 2SK740 Silicon N-channel MOS FET Application High speed power switching Features * * * * * Low on-resistance High speed switching L...5 A, VGS = 10 V, RL = 6 Test conditions I D = 10 mA, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS =...
Description Silicon N-channel MOS FET

File Size 46.51K  /  8 Page

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    HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-10 HN58C257AT

HITACHI[Hitachi Semiconductor]
Part No. HN58C256A HN58C256AFP-10 HN58C256AFP-85 HN58C256AP-10 HN58C256AP-85 HN58C256AT-10 HN58C256AT-85 HN58C257AT-10 HN58C257AT-85
OCR Text ...3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 (Top view) 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 A2 A1 A0 I/O0 I/O1 I/O2 VSS I/O3 I/O4 I/O5 I/O6 I/O7 CE A10 15 16 17...
Description 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A)

File Size 117.68K  /  25 Page

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    LM311 LM311N LM211D LM211 ON0303 LM311D

ONSEMI[ON Semiconductor]
Motorola, Inc
Motorola Inc
Part No. LM311 LM311N LM211D LM211 ON0303 LM311D
OCR Text ...y with Offset Balance 3.0 k VCC 2 5.0 k 5 2 RL 6 Inputs 87 Output 1 4 VEE Ground-Referred Load VCC 2 Inputs 3 Load Referred to Negative Supply VCC 2 7 Inputs Output RL 3 3 VEE + - 4 Single Supply VCC 8 7 1 RL Output 8 1 N SUFFIX PLAST...
Description    HIGH PERFORMANCE VOLTAGE COMPARATORS
From old datasheet system

File Size 172.81K  /  8 Page

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