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IRF[International Rectifier] International Rectifier, Corp.
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| Part No. |
409CNQ150 409CNQ135
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| OCR Text |
...409CNQ... Units
400 135 to 150 20000 0.72 A V A V
(per leg)
- 55 to 175
C
80.01 [3.150] 40.26 [1.585] 39.75 [1.565] COMMON CATH...sec Frequency limited by TJ max. VA = 1.5 x VR typical A 50% duty cycle @ TC = 125 C, rectangular wa... |
| Description |
135V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package SCHOTTKY RECTIFIER 肖特基整流器
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| File Size |
158.53K /
5 Page |
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International Rectifier, Corp. IRF[International Rectifier]
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| Part No. |
409DMQ150 409DMQ135
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| OCR Text |
...ive Avalanche Current (Per Leg) 20000 2300 15 1 A mJ A Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM a...sec Frequency limited by TJ max. VA = 1.5 x VR typical
409DMQ Units
400 A
Conditions
50% dut... |
| Description |
SCHOTTKY RECTIFIER 肖特基整流器 150V 400A Schottky DOUBLER Diode in a TO-244AB Isolated package
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| File Size |
67.58K /
5 Page |
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FUJI[Fuji Electric]
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| Part No. |
7MBR100SD060
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| OCR Text |
...typ.) VGE=0V, f= 1MHz, Tj= 25C
20000 500
[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
400
20
Cies
300
15
... |
| Description |
PIM/Built-in converter with thyristor and brake (600V / 100A / PIM)
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| File Size |
416.33K /
7 Page |
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FUJI[Fuji Electric]
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| Part No. |
7MBR50SA060
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| OCR Text |
...(typ.) VGE=0V, f= 1MHz, Tj= 25
20000
o
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25
500
o
C
C
25
10000 ...sec ]
Temperature [
C]
IGBT Modules
7MBR50SA060
[ Brake ] Collector current vs. Colle... |
| Description |
IGBT(600V/50A/PIM)
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| File Size |
640.38K /
7 Page |
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FUJI[Fuji Electric]
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| Part No. |
7MBR75SD060
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| OCR Text |
...typ.) VGE=0V, f= 1MHz, Tj= 25C
20000 500
[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C
25
10000
Capacitance : Cies, Coes, Cres [ pF ]
Collector - Emitter voltage : VCE [ V ]
400
20
Cies
300
15
... |
| Description |
PIM/Built-in converter with thyristor and brake (600V / 75A / PIM)
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| File Size |
414.90K /
7 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT100GT60JR
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| OCR Text |
...G ENERGY LOSSES (J) 30000 25000 20000 15000 10000 5000 0
SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE T = 125C
J
Eon2,200A
Eon2,200A
14000 12000 10000 8000 6000
Eoff,200A
4-2006
Eoff,200A
Eon2,100A Eoff,10... |
| Description |
Thunderbolt IGBT
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| File Size |
403.01K /
6 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT75GP120B2
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| OCR Text |
...nergy Loss vs Collector Current 20000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
TJ = 25C, VGE=10V
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Cur... |
| Description |
MOSFET POWER MOS 7 IGBT
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| File Size |
94.63K /
6 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT75GP120J
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| OCR Text |
...nergy Loss vs Collector Current 20000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
TJ = 25C, VGE=10V
0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Cur... |
| Description |
MOSFET POWER MOS 7 IGBT
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| File Size |
101.25K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM2G150US60
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| OCR Text |
...0
Ton
Capacitance [pF]
20000
Switching Time [ns]
25000
Cies
Tr 100
15000
10000
Coes
5000 Cres 0 0.5 10 1 10...sec]
Fig 17. RBSOA Characteristics
(c)2002 Fairchild Semiconductor Corporation
Fig 18. Transi... |
| Description |
IGBT Molding Type Module
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| File Size |
685.34K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FM2G200US60
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| OCR Text |
...C = 25 TC = 125
Ton
25000 20000 15000 10000 5000 0 0.5 Cres
Coes
Switching Time [ns]
Tr
100
50 1 10 30 1 10 50
Colle...sec]
Fig 17. RBSOA Characteristics
(c)2002 Fairchild Semiconductor Corporation
Fig 18. Transi... |
| Description |
IGBT Molding Type Module
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| File Size |
699.17K /
9 Page |
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it Online |
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Price and Availability
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