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DTCSP F256H GBU8A TC400 SHD12 AON6408 8014A AM4512C
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For 20000 sec Found Datasheets File :: 419    Search Time::1.297ms    
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    IRF[International Rectifier]
International Rectifier, Corp.
Part No. 409CNQ150 409CNQ135
OCR Text ...409CNQ... Units 400 135 to 150 20000 0.72 A V A V (per leg) - 55 to 175 C 80.01 [3.150] 40.26 [1.585] 39.75 [1.565] COMMON CATH...sec Frequency limited by TJ max. VA = 1.5 x VR typical A 50% duty cycle @ TC = 125 C, rectangular wa...
Description 135V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
SCHOTTKY RECTIFIER 肖特基整流器

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. 409DMQ150 409DMQ135
OCR Text ...ive Avalanche Current (Per Leg) 20000 2300 15 1 A mJ A Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM a...sec Frequency limited by TJ max. VA = 1.5 x VR typical 409DMQ Units 400 A Conditions 50% dut...
Description SCHOTTKY RECTIFIER 肖特基整流器
150V 400A Schottky DOUBLER Diode in a TO-244AB Isolated package

File Size 67.58K  /  5 Page

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    FUJI[Fuji Electric]
Part No. 7MBR100SD060
OCR Text ...typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 400 20 Cies 300 15 ...
Description PIM/Built-in converter with thyristor and brake (600V / 100A / PIM)

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    FUJI[Fuji Electric]
Part No. 7MBR50SA060
OCR Text ...(typ.) VGE=0V, f= 1MHz, Tj= 25 20000 o [ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25 500 o C C 25 10000 ...sec ] Temperature [ C] IGBT Modules 7MBR50SA060 [ Brake ] Collector current vs. Colle...
Description IGBT(600V/50A/PIM)

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    FUJI[Fuji Electric]
Part No. 7MBR75SD060
OCR Text ...typ.) VGE=0V, f= 1MHz, Tj= 25C 20000 500 [ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25C 25 10000 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 400 20 Cies 300 15 ...
Description PIM/Built-in converter with thyristor and brake (600V / 75A / PIM)

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    ADPOW[Advanced Power Technology]
Part No. APT100GT60JR
OCR Text ...G ENERGY LOSSES (J) 30000 25000 20000 15000 10000 5000 0 SWITCHING ENERGY LOSSES (J) = 400V V CE = +15V V GE T = 125C J Eon2,200A Eon2,200A 14000 12000 10000 8000 6000 Eoff,200A 4-2006 Eoff,200A Eon2,100A Eoff,10...
Description Thunderbolt IGBT

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    ADPOW[Advanced Power Technology]
Part No. APT75GP120B2
OCR Text ...nergy Loss vs Collector Current 20000 SWITCHING ENERGY LOSSES (J) VCE = 600V VGE = +15V TJ = 125C TJ = 25C, VGE=10V 0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Cur...
Description MOSFET
POWER MOS 7 IGBT

File Size 94.63K  /  6 Page

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    ADPOW[Advanced Power Technology]
Part No. APT75GP120J
OCR Text ...nergy Loss vs Collector Current 20000 SWITCHING ENERGY LOSSES (J) VCE = 600V VGE = +15V TJ = 125C TJ = 25C, VGE=10V 0 20 40 60 80 100 120 140 160 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Cur...
Description MOSFET
POWER MOS 7 IGBT

File Size 101.25K  /  6 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FM2G150US60
OCR Text ...0 Ton Capacitance [pF] 20000 Switching Time [ns] 25000 Cies Tr 100 15000 10000 Coes 5000 Cres 0 0.5 10 1 10...sec] Fig 17. RBSOA Characteristics (c)2002 Fairchild Semiconductor Corporation Fig 18. Transi...
Description IGBT
Molding Type Module

File Size 685.34K  /  9 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FM2G200US60
OCR Text ...C = 25 TC = 125 Ton 25000 20000 15000 10000 5000 0 0.5 Cres Coes Switching Time [ns] Tr 100 50 1 10 30 1 10 50 Colle...sec] Fig 17. RBSOA Characteristics (c)2002 Fairchild Semiconductor Corporation Fig 18. Transi...
Description IGBT
Molding Type Module

File Size 699.17K  /  9 Page

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