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SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-Q
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OCR Text |
...ime - 1.8V device(K9F6408Q0C) : 200s(Typ.) - 3.3V device(K9F6408U0C) : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/Data Multiplexed I/O Port * Hardware Data Protection - Program/Erase Lockout During Power Transitions * Relia... |
Description |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:56; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 8M x 8 Bit Bit NAND Flash Memory
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File Size |
502.29K /
29 Page |
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ANALOGIC TECH
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Part No. |
AAT3152
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OCR Text |
....0 4.2
Supply Voltage (V)
200s/div
Turn On to 1.5X Mode
(VIN = 3.5V; 20mA Load)
Turn On to 2X Mode
(VIN = 2.8V; 20mA Load)
EN (2V/div) CP (2V/div) VSINK (500mV/div) IIN (200mA/div) 200s/div
EN (2V/div) CP (2V/div) VSIN... |
Description |
High Efficiency 1X/1.5X/2X Charge Pump for White LED Applications
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File Size |
125.91K /
11 Page |
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it Online |
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HVVi Semiconductors, Inc.
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Part No. |
HVV1214-025
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OCR Text |
...ar HVV1214-025 L-Band RadarMHz, 200s Pulse, 10% Duty 1200-1400 Pulsed Power Transistor L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty HVV1214-025 PRODUCT OVERVIEW 1200-1400 MHz, 200!s Pulse, 10% Duty
L-Band Radar... |
Description |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
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File Size |
642.96K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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