30v s pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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30v s Datasheet PDF File

For 30v s Found Datasheets File :: 28877 Search Time::2.531ms
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				PANASONIC[Panasonic Semiconductor]
Part No.	2sD2137 2sD2137A
OCR Text	...BE = 0 VCE = 80V, VBE = 0 VCE = 30v, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4...s s s 250 min typ max 100 100 100 100 100 Unit A A A V Forward current transfer ratio Base to emi...
Description	silicon NPN triple diffusion planar type(For power amplification)
File Size	52.93K / 3 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2sD2138A 2sB1418 2sB1418A 2sD2138
OCR Text	...B = 0 VCB = -80V, IB = 0 VCE = -30v, IB = 0 VCE = -40V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -2A ...s s min typ max -100 -100 -100 -100 -100 Unit A A A V Forward current transfer ratio Base to emit...
Description	silicon PNP epitaxial planar type Darlington(For power amplification)
File Size	59.81K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2sD2138 2sD2138A
OCR Text	... IE = 0 VCE = 80V, IE = 0 VCE = 30v, IB = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4...s s Rank classification Q P 2000 to 5000 4000 to 10000 Rank hFE2 1 Power Transistors P...
Description	silicon NPN triple diffusion planar type Darlington(For power amplification)
File Size	59.65K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2sJ163
OCR Text	...tions VDs = -10V, VGs = 0 VGs = 30v, VDs = 0 IG = 10A, VDs = 0 VDs = -10V, ID = -10A VDs = -10V, ID = -1mA, f = 1kHz VDs = -10mV, VGs = 0 VDs = -10V, VGs = 0, f = 1MHz 1.8 65 1.5 2.5 300 12 4 3.5 min - 0.2 typ max -6 10 Unit mA nA V V ms p...
Description	silicon P-Channel Junction FET
File Size	30.72K / 2 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2sJ164
OCR Text	...tions VDs = -10V, VGs = 0 VGs = 30v, VDs = 0 IG = 10A, VDs = 0 VDs = -10V, ID = -10A VDs = -10V, ID = -1mA, f = 1kHz VDs = -10mV, VGs = 0 VDs = -10V, VGs = 0, f = 1MHz 1.8 65 1.5 2.5 300 10 3 3 3.5 min - 0.2 typ max -6 10 Unit mA nA V V ms ...
Description	silicon P-Channel Junction FET
File Size	30.13K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ172
OCR Text	...VGs = -10 V . . duty < 1% VDD = 30v -100 0 20 60 80 40 Gate Charge Qg (nc) -20 100 -0.5 -1.0 -2 -5 -10 Drain Current ID (A) -20 ...s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02...
Description	silicon P-Channel MOs FET
File Size	41.90K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2sJ186
OCR Text	...V PW = 2 s duty < 1% . . VDD = -30v -200 -4 tf td (off) td (on) 20 10 5 -8 -600 VGs ID = -0.5 A -12 tr 2 1 -0.01 -0.02 -800 -16 -1,000 0 2 6 8 4 Gate Charge Qg (nc) -20 10 -0.05 -0.1 -0.2 -0.5...
Description	silicon P-Channel MOs FET
File Size	41.04K / 9 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Toshiba Semiconductor
Part No.	2sJ339
OCR Text	...tching Time Test Circuit VDD=--30v VIN 0V --10V VIN PW=10s D.C.1% ID=--15A RL=2 VOUT D G P.G 50 s --50 ID -- VDs 5.0V VG s =-- --50 ID -- VGs VDs=--10V 25C 75C --4 . --4 0V 25C --1 --2 --3 --40 --40 D...
Description	P-Channel silicon MOsFET Ultrahigh-speed switching Applications
File Size	39.40K / 4 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2sJ340
OCR Text	...tching Time Test Circuit VDD=--30v Vin 0V --10V Vin PW=10s D.C.1% ID=--15A RL=2 VOUT D G P.G 50 2sJ340 s No.6420-2/4 2sJ340 --50 ID -- VDs 5.0V --4 .5V VG s =-. --4 0V --50 ID -- VGs VDs=--10V --40 --40 ...
Description	Ultrahigh-speed switching Applications 超高速开关应
File Size	40.73K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2sJ352 2sJ351
OCR Text	...Output 10% Input 90% VDD . . = -30v 50 toff 10% Waveforms PW = 50 s duty ratio = 1% 6 Unit: mm 5.0 0.3 15.6 0.3 1.0 3.2 0.2 4.8 0.2 1.5 0.5 14.9 0.2 19.9 0.2 1.6 1.4 Max 2.0 2.8 18.0 0.5 1.0 0.2 2.0 ...
Description	silicon P-Channel MOs FET 硅P沟道场效应晶体管
File Size	39.26K / 8 Page	View it Online	Download Datasheet

For 30v s Found Datasheets File :: 28877 Search Time::2.531ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |