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  4.005 Datasheet PDF File

For 4.005 Found Datasheets File :: 40235    Search Time::22.391ms    
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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ...tg 1 Ratings -20 20 -0.2 -0.4 150 150 -55 to +150 Unit V V A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source ...005 Forward Transfer Admittance vs. Drain Current Tc = -25 C 75 C 25 C 6 I D = -0.05 A ...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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    2SJ567

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ567
OCR Text ... VDS = -10 V, ID = -1.5 A Min 3/4 3/4 -200 -1.5 3/4 1.0 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 1.6 2.0 410 40 145 20 Max 10 -100 3/4 -3.5 2.0 3/4 3/4 ...005 0.003 0.001 10 m Duty = 0.5 0.2 0.1 0.05 0.02 Single pulse PDM t 0.01 T Duty = t/T Rth (ch-c)...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV)

File Size 237.21K  /  7 Page

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    2SJ574

HITACHI[Hitachi Semiconductor]
Part No. 2SJ574
OCR Text ...50 mA) R DS = 2.2 typ. (VGS = -4 V , I D = -150 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 ...005 Maximum Safe Operation Area 10 s 100 s 1 ms 600 I D (A) Channel Dissipation 400 ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.90K  /  8 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ...50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (MPAK) Outline MPAK 3 1 D 3 2 2 G ...005 -0.002 -0.001 Operation in this area is limited by RDS(on) Mavimum Safe Operation Area 600...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ576

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HITACHI[Hitachi Semiconductor]
Part No. 2SJ576
OCR Text ...50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) * 4 V gate drive device. * Small package (CMPAK) Outline CMPAK 3 1 2 D 3 2 G...005 -0.002 -0.001 Power vs. temperature Derating 400 *Pch (mW) 300 I D (A) 10 s 100 s 1...
Description Silicon P Channel MOS FET High Speed Switching

File Size 26.18K  /  5 Page

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    2SJ586

HITACHI[Hitachi Semiconductor]
Part No. 2SJ586
OCR Text ...res * Low on-resistance R DS = 4.1 typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) * 2.5 V gate drive devic...005 -0.002 -0.001 *Pch (mW) 300 I D (A) 10 s 100 s 1 ms PW = 10 ms (1 shot) Power Dis...
Description Silicon P Channel MOS FET High Speed Switching

File Size 40.34K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text ...stance R DS = 8.5 typ. (VGS = -4 V , I D = -25 mA) R DS = 15 typ. (VGS = -2.5 V , ID = -10 mA) * 2.5 V gate drive device. * Small package (...005 -0.002 -0.001 Maximum Safe Operation Area 150 I D (A) Channel Dissipation Drain C...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.71K  /  8 Page

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    2SJ588

HITACHI[Hitachi Semiconductor]
Part No. 2SJ588
OCR Text ...50 mA) R DS =5.7 typ. (V GS = -4 V , I D = -50 mA) * 4 V gate drive device. Outline SPAK D 3 12 3 2 G 1. Source 2. Drain 3....005 Power vs. Temperature Derating 400 Pch (mW) I D (A) 300 10 s 100 s 1ms,10 ms DC O...
Description Silicon P Channel MOS FET High Speed Switching

File Size 25.19K  /  5 Page

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    2SJ610

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ610
OCR Text ... Tstg Rating -250 -250 20 -2.0 -4.0 20 180 -2.0 2.0 150 -55~150 A Unit V V V Pulse (t = 1 ms) (Note 1) JEDEC W mJ A mJ C C SC-64 ...005 0.003 0.001 10 m Duty = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c)...
Description Switching Regulator, DC-DC Converter and Motor Drive Applications

File Size 235.74K  /  7 Page

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    2SK740

HITACHI[Hitachi Semiconductor]
Part No. 2SK740
OCR Text ...R)GSS I GSS 150 20 -- -- 2.0 -- 4.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 7.0 1200 550 85 20 50 70 40 1.2 220 Max -- -- 10 250 ...005 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance...
Description Silicon N-Channel MOS FET

File Size 46.51K  /  8 Page

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