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  40-860 Datasheet PDF File

For 40-860 Found Datasheets File :: 6569    Search Time::20.813ms    
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    NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D

ONSEMI[ON Semiconductor]
Part No. NTP52N10 NTP52N10_D NTP52N10D NTP52N10/D
OCR Text ... = 50 V, VGS = 10 Vdc, IL(pk) = 40 A, L = 1.0 mH, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient Maximum Lead Tempera...860 265 pF VGS(th) 2.0 - RDS(on) - - VDS(on) - gFS - 1.25 31 1.45 - mhos 0.023 0.050 0.030 0.060 Vdc...
Description Power MOSFET 52 Amps, 100 Volts
Power MOSFET 52 Amps 100 Volts

File Size 72.62K  /  8 Page

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    STM901-30 2879

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STM901-30 2879
OCR Text ...44.7 dBm PEP) (V = 26V) 28 0.40 0.40 0.54 1.62 14 48 - 30 to +100 - 30 to +100 Vdc Adc Adc Adc Adc dBm PEP dBm PEP C C Storage Temp...860 35 27 -- -- -- 38 30 1.5:1 -33 900 -- -- 3:1 -26 MHz dB % dBT** No Degradation in O...
Description RF Power Module Linear Base Station Applications(用于线性基站的RF功率模块)
From old datasheet system

File Size 144.90K  /  8 Page

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    TP3032

Motorola Inc
Motorola, Inc
Part No. TP3032
OCR Text ...R VCBO VEBO IC PD Tstg TJ Value 40 48 3.5 4 52.5 0.3 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C CASE 319-07, STYLE 2 THERMAL CHA...860 MHz f = 860 MHz Zin 980 980 ZOL* Zo = 10 VCE = 26 V f (MHz) 860 880 900 935 960 980 Zin (...
Description RF POWER TRANSISTOR NPN SILICON

File Size 117.97K  /  4 Page

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    U4070B-FP U4074B

TEMIC[TEMIC Semiconductors]
Part No. U4070B-FP U4074B
OCR Text ...ot Value 50 50 125 -25 to + 60 -40 to + 125 860 400 Unit mA mA C C C mW mW Thermal Resistances Parameters Junction ambient DIP14 SO16 Symbol RthJA Value 75 160 Unit K/W K/W Electrical Characteristics Tamb = -10 to 60C, reference poi...
Description Tone Ringer Interface

File Size 97.80K  /  6 Page

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    U4076B U4076B-FL

TEMIC[TEMIC Semiconductors]
Part No. U4076B U4076B-FL
OCR Text ...whereas a short time current of 40 mA is possible in both direction when t = 0.1 ms. An external current limitation is necessary when the IC...860 720 mW mW Thermal Resistance Parameters Junction ambient DIP14 SO16-L Symbol RthJA RthJA ...
Description Three-Tone Ringer for Telephone Sets

File Size 88.83K  /  6 Page

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    AT603 AT603S16

POSEICO[Power Semiconductors]
Part No. AT603 AT603S16
OCR Text ...DOUBLE SIDE COOLED 50.0 45.0 40.0 35.0 Zth j-h [C/kW] 30.0 25.0 20.0 15.0 10.0 5.0 0.0 0.001 0.01 0.1 t[s] 1 10 100 Cathode terminal type DIN 46244 - A 4.8 - 0.8 Gate terminal type AMP 60598 - 1 Distributed by All the characteristics giv...
Description PHASE CONTROL THYRISTOR

File Size 35.59K  /  3 Page

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    LET9060S

STMICROELECTRONICS[STMicroelectronics]
Part No. LET9060S
OCR Text ... MHz f = 1 MHz f = 1 MHz 2.5 74 40 2.8 2.0 0.7 Min. 65 1 1 5.0 0.8 Typ. Max. Unit V A A V V mho pF pF pF Ref. 7143417B DYNAMIC (f = 945 M...860 880 900 920 940 960 ZIN () 0.65 - j 0.05 0.75 - j 0.6 0.9 - j 1.4 0.4 - j 1.3 0.4 - j 0.8 0.5...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

File Size 294.85K  /  10 Page

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    NTE3122

NTE[NTE Electronics]
Part No. NTE3122
OCR Text ... . . . . . . . . . . . . . . . -40 to +85C Lead Temperature, TL During Soldering, 1.4mm from bottom face of resin package, 5sec . . . . . . ...860 80 70 Max 4.0 10-6 1.0 - - - Unit mA A V nm s s VCE = 10V, Ee = 0 1mW/cm2, Collector-Emitt...
Description Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington

File Size 18.36K  /  2 Page

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    NTE3123

NTE[NTE Electronics]
Part No. NTE3123
OCR Text ... D Intermediate Acceptance: q = 40 Typ D Visible Light Cut-Off Applications: D VCRs D Optoelectronic Switches Absolute Maximum Ratings: (TA ...860 400 300 40 Max 0.8 10-6 1.0 - 2000 1500 - Unit mA A V nm s s deg. Collector-Emitter Saturatio...
Description Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington

File Size 19.37K  /  2 Page

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