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  5.9ghz Datasheet PDF File

For 5.9ghz Found Datasheets File :: 808    Search Time::0.985ms    
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    Infineon
Part No. BFR93A
OCR Text ... ce = 8 v, f = 500 mhz f t 4.5 6 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.58 0.9 pf collector-emitter capaci...9ghz v ce = parameter 0 10 20 30 40 ma 60 i c 4 6 8 10 db 14 g 10v 5v 3v 2v 1v 0.7v p...
Description NPN Silicon RF Transistor for low noi...

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    Infineon
Part No. BFR280W
OCR Text ...rom 0.2 ma to 8 m f t = 7.5 ghz f = 1.5 db at 900 mhz 1 3 vso05561 2 esd : e lectro s tatic d ischarge sensitive device, observ...9ghz v ce = parameter 0 2 4 6 8 ma 11 i c 6 8 10 12 14 16 db 20 g 10v 2v 1v 0.7v po...
Description NPN Silicon RF Transistor for low noi...

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    Infineon
Part No. BFG193
OCR Text ...er-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 2 - noise figure i c = 10 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f ...9ghz v ce = parameter 0 10 20 30 40 50 60 70 ma 90 i c 4 6 8 10 12 14 16 db 20 g 1...
Description NPN Silicon RF transistor for low noi...

File Size 111.37K  /  6 Page

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    Mimix Broadband, Inc.
Part No. CDQ6004-QS-0G00 CDQ6004-QS-0G0T
OCR Text ...noise figure output p1db 0.9 16.5 -13 -16 42 2.1 +23 2 15 -11 -12 41 2.1 +23 2.4 14.9 -20 -11 40.5 2.6 +24 ghz db db db dbm db dbm typical p...9ghz gain over voltage 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 frequency...
Description 0.05-4.0 GHz Dual High Dynamic Range Amplifier 50 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

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    Infineon
Part No. BFR93AW
OCR Text ...z at collector currents from 5 ma to 30 ma 1 3 vso05561 2 esd : e lectro s tatic d ischarge sensitive device, observe handling precauti...9ghz v ce = parameter 0 10 20 30 40 ma 60 i c 0 2 4 6 8 10 12 14 db 18 g 10v 5v 3...
Description NPN Silicon RF Transistor for low dis...

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    RF Micro Devices, Inc.
sirenza
Part No. SZA-6044
OCR Text ...amplifier for equipment in the 5.1 - 5.9 ghz band. it can run from a 3v to 5v supply. load line optimization for target band is possible...9ghz db 8 11 orl worst case output return loss 5.1-5.9ghz db 12 17 oip 3 output ip3, pout per tone ...
Description 5100 MHz - 5900 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 4 X 4 MM, PLASTIC, QFN-20

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    njr
Part No. NJM12903 NJG1101F
OCR Text ...PE (Top View) 1 6 2 5 Pin connection 1.RFin 2.GND 3.VCONT 4.RFout & VDD 5.GND 6.VDD 3 Note: 4 is a package orientatio...9GHz Band: Measured on TEST CIRCUIT 2) GAIN vs. FREQUENCY (V =3V) DD GAIN vs. V 20 cont ...
Description SINGLE SUPPLY DUAL COMPARATOR
WIDE BAND AGC AMPLIFIER GaAs MMIC

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    Sanyo
Part No. 2SC3771
OCR Text ...B=10V, f=1MHz 40* 1.4 2.2 0.7 0.5 1.1 Conditions Ratings min typ max 1.0 10 200* GHz pF pF Unit A A * : The 2SC3771 is classified by 5mA ...9GHz VCE=10V, IC=3mA, f=0.9GHz, See specified Test Circuit. Ratings min typ 16 10 3.5 max Unit dB dB...
Description NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator Mixer, HF Amplifier Applications

File Size 136.33K  /  5 Page

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    Sanyo
Part No. 2SC4401
OCR Text ...598HA (KT)/6018TA, TS No.2754-1/5 2SC4401 Parameter Forward Transfer Gain Maximum Available Power Gain Noise Figure Symbol | S21e |2 MAG NF Conditions VCE=3V, IC=3mA, f=0.9GHz VCE=3V, IC=3mA, f=0.9GHz VCE=3V, IC=3mA, f=0.9GHz See specif...
Description NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications
NPN Epitaxial Planar Silicon Transistors

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    Sanyo
Part No. 2SC4402
OCR Text ...B=3V, f=1MHz 40* 3.0 0.85 0.8 1.5 Conditions Ratings min typ max 1.0 1.0 200* GHz pF pF Unit A A * : The 2SC4402 is classified by 10mA hF...9GHz VCE=3V, IC=10mA, f=0.9GHz VCE=3V, IC=5mA, f=0.9GHz See specified Test Circuit. Ratings min typ ...
Description NPN Epitaxial Planar Silicon Transistors

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