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  50 75-ohm Datasheet PDF File

For 50 75-ohm Found Datasheets File :: 16246    Search Time::2.938ms    
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    MRF176 MRF176GU MRF176GV

MOTOROLA[Motorola, Inc]
Part No. MRF176 MRF176GU MRF176GV
OCR Text ...ectrical Performance MRF176GU @ 50 V, 400 MHz ("U" Suffix) Output Power -- 150 Watts Power Gain -- 14 dB Typ Efficiency -- 50% Typ MRF176GV ...75 1.60 + j2.70 (Pout = 200 W) 7.50 - j6.50 5.50 - j7.00 3.20 - j6.00 2.50 - j4.80 2.05 - j2.50 17.0...
Description N-CHANNEL MOS BROADBAND RF POWER FETs

File Size 176.10K  /  10 Page

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    MRF18030A MRF18030ALR3 MRF18030ALSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18030A MRF18030ALR3 MRF18030ALSR3
OCR Text ...B (Typ) @ 30 Watts Efficiency - 50% (Typ) @ 30 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and Hi...75 4.15 - j10.38 4.04 - j10.22 6.12 - j12.29 6.20 - j12.29 8.61 - j12.10 15.19 - j11.85 Zload 4.18 ...
Description SEE A3282EUA-T
CHOPPER STABILIZED LATCH W/TIN PLATING
SEE A3282ELHLT-T
RF Power Field Effect Transistors

File Size 504.66K  /  8 Page

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    MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D
OCR Text ...alue 250 250 20 40 5.0 3.2 15 50 0.4 1.75 - 55 to 150 84 2.50 100 71.4 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ C/W TJ, Tstg EAS RJC RJA RJA TL C Designer's Data for "Worst Case" Conditions -- The Designer's Data She...
Description TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system

File Size 252.63K  /  10 Page

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    MTD5P06E

MOTOROLA INC
Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06E
OCR Text ... 1.1 10 25C 0.9 0.7 - 50 - 25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (C) 125 150 1 0 10 30 40 20 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 70 Figure 5. On-Resistance Variation with Temperature Figur...
Description TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM

File Size 207.75K  /  10 Page

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    MTD5P06V ON2511 MTD5P06V-T4

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MTD5P06V ON2511 MTD5P06V-T4
OCR Text ...the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E-FET designs, TMOS V is designed to withstand high energ...75 100 71.4 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ C/W TJ, Tstg EAS RJC RJA RJA...
Description 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
From old datasheet system

File Size 244.68K  /  10 Page

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    MTE125N20E MTE125N20E_D ON2529

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTE125N20E MTE125N20E_D ON2529
OCR Text ...-Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL = 125 Apk, L = 0.05mH, RG = 25 ) RMS Isolation Voltage Thermal Resistance -- Juncti...75 TJ, JUNCTION TEMPERATURE (C) 125 150 1 0 50 100 150 VDS, DRAIN-TO-SOURCE VOLTAGE (...
Description From old datasheet system
TMOS POWER FET 125 AMPERES 200 VOLTS RDS(on) = 0.015 OHM

File Size 227.99K  /  8 Page

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    MTY55N20E MTY55N20E_D ON2720

Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semi
Part No. MTY55N20E MTY55N20E_D ON2720
OCR Text ...75 1.5 1.25 1 0.75 0.5 0.25 0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 27.5 A 10000 VGS = 0 V 1000 I DSS , LEAKAGE (nA) TJ = 125C 100C 100 10 25C 1 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) ...
Description TMOS POWER FET 55 AMPERES 200 VOLTS RDS(on) = 0.028 OHM 55 A, 200 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system

File Size 231.14K  /  8 Page

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    NT68275

Novatek
ETC[ETC]
Part No. NT68275
OCR Text ...ulse Width of Vertical Fly-back 50 Min. 30 Typ. Max. *150 5 0 0.7 5.5 *200 5 0 20 1 5V Unit KHz V V us us Hz V V us ms Notes HFLB Thwidth 2.0 V 0V 5V VFLB Tvwidth 2.0 V 0V Figure 2. H/V Fly-Back Signal 6 NT6...
Description IIC Bus Controlled On-Screen Display

File Size 1,384.33K  /  38 Page

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    PA21A PA21 PA26 PA25 PA25A

List of Unclassifed Man...
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. PA21A PA21 PA26 PA25 PA25A
OCR Text ...OUT = 1A, F = 1kHz -VS-.3 60 60 50 TEST CONDITIONS 2 MIN PA21/25/26 TYP MAX PA21A/PA25A MIN TYP MAX UNITS 1.5 15 35 85 80 68 10 ...75 100 125 150 TEMPERATURE, T (C) SINGLE AMPLIFIER BOTH AMPLIFIERS BIAS CURRENT 1.75 1.5 1.25 1....
Description    POWER DUAL OPERATIONAL AMPLIFIERS
POWER DUAL OPERATIONAL AMPLIFIERS 功耗双运算放大

File Size 83.30K  /  5 Page

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    PHD12N10E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD12N10E
OCR Text ... pcb mounted, minimum footprint 50 MAX. 2 UNIT K/W K/W September 1997 1 Rev 1.000 Philips Semiconductors Product Specification PowerMOS transistor PHD12N10E STATIC CHARACTERISTICS Tj = 25 C unless otherwise specifie...
Description PowerMOS transistor

File Size 78.59K  /  7 Page

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For 50 75-ohm Found Datasheets File :: 16246    Search Time::2.938ms    
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