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  600a-ifsm Datasheet PDF File

For 600a-ifsm Found Datasheets File :: 128    Search Time::0.922ms    
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    SDD320 SDD320N08 SDD320N12 SDD320N14 SDD320N16 SDD320N18

Sirectifier Semiconductors
Part No. SDD320 SDD320N08 SDD320N12 SDD320N14 SDD320N16 SDD320N18
OCR Text ...per module TVJ=TVJM; VR=VRRM IF=600A; TVJ=25 C o Test Conditions Characteristic Values 40 1.2 0.75 0.63 760 275 0.129 0.065 0.169 0.0...IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward curre...
Description Diode-Diode Modules

File Size 249.79K  /  4 Page

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    FST8340M FST8345M FST83100M FST8320M FST8330M FST8335M FST8360M

TRANSYS Electronics Limited
Part No. FST8340M FST8345M FST83100M FST8320M FST8330M FST8335M FST8360M
OCR Text ...Unless Otherwise Specified 60A 600A 0.65V 0.75V 0.84V TC =110 8.3ms , half sine (FST8320M~FST8345M) (FST8360M) (FST8380M~FST83100M) I FM = 40 A; T j = 25 IR 1.5 m A 500 mA 1.2 TJ = 25 TJ = 125 DIM A B C D E F G J K ...
Description SCHOTTKY DIODES MODULE TYPE 80A

File Size 141.88K  /  2 Page

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    SDT320 SDT320GK08 SDT320GK12 SDT320GK14 SDT320GK16 SDT320GK18 STD320 STD320GK08 STD320GK12 STD320GK14 STD320GK16 STD320G

Sirectifier Semiconductors
Part No. SDT320 SDT320GK08 SDT320GK12 SDT320GK14 SDT320GK16 SDT320GK18 STD320 STD320GK08 STD320GK12 STD320GK14 STD320GK16 STD320GK18
OCR Text ...J=TVJM; VR=VRRM; VD=VDRM IT, IF=600A; TVJ=25oC For power-loss calculations only (TVJ=140 C) o o Characteristic Values 70 40 1.32 0.8 0.8...IFSM: Crest value, t: duration Fig. 2 i2t versus time (1-10 ms) Fig. 2a Maximum forward curren...
Description Thyristor-Diode Modules, Diode-Thyristor Modules

File Size 331.63K  /  4 Page

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    DFM600BXS17-A000

Dynex Semiconductor
Part No. DFM600BXS17-A000
OCR Text ...FM (typ) (max) (max) 1700V 2.0V 600A 1200A APPLICATIONS * * * * * * Chopper Diodes Boost and Buck Converters Free-wheel Circuits Snubber...IFSM I2 t Pmax Visol 3674 A kA2s W V VR = 0, tP = 10ms, Tvj = 125C Tcase = 25C, Tvj = 125C ...
Description Fast Recovery Diode Module

File Size 219.41K  /  7 Page

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    SEMIX904GB126HDS08

Semikron International
Part No. SEMIX904GB126HDS08
OCR Text ... Eoff Rth(j-c) per IGBT ICnom = 600A VGE = 15V chiplevel Tj = 25C Tj = 125C Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 5 Tj = 25C Tj = 125C f = 1MHz f = 1MHz f = 1MHz 43.1 2.25 1.95 4800 1.25 440 85 60 710 130 88 0.05 1.7 2.00 1 0.9 1....
Description Trench IGBT Modules

File Size 184.58K  /  5 Page

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    APT15GN120BDQ1 APT15GN120BDQ1G APT15GN120SDQ1 APT15GN120SDQ1G

Microsemi Corporation
Part No. APT15GN120BDQ1 APT15GN120BDQ1G APT15GN120SDQ1 APT15GN120SDQ1G
OCR Text ...shold Voltage (VCE = VGE, I C = 600A, Tj = 25C) MIN TYP MAX Units 1200 5.0 1.4 2 2 5.8 1.7 2.0 6.5 2.1 Volts Collector-Emitt...IFSM Symbol Characteristic / Test Conditions Maximum Average Forward Current (TC = 127C, Duty Cycle ...
Description High Speed PT IGBT

File Size 161.95K  /  9 Page

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    APTDF400AK120G

Microsemi Corporation
Part No. APTDF400AK120G
OCR Text ... Test Conditions IF = 400A IF = 600A IF = 400A Tj = 125C Tj = 25C VR = 1200V Tj = 125C VR = 1200V Min Typ 2.4 2.7 1.8 Max 3.0 Unit V 250 1000 440 A pF Dynamic Characteristics Symbol Characteristic trr trr Qrr IRRM trr Qrr IRRM Reverse R...
Description Diode Phase leg Power Module

File Size 212.40K  /  4 Page

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    APT200GT60JRDL

Microsemi Corporation
Part No. APT200GT60JRDL
OCR Text ...NIT Volts 600 30 195 100 600 600A @ 600V 595 -55 to 150 Amps Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Oper...IFSM All Ratings: TC = 25C unless otherwise specified. APT200GT60JRDL 100 116 640 Amps Charac...
Description Resonant Mode Combi IGBT

File Size 263.71K  /  9 Page

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    APT200GT60JRDQ4

Microsemi Corporation
Part No. APT200GT60JRDQ4
OCR Text ...tings 600 Volts 30 195 100 600 600A @ 600V 595 -55 to 150 Watts C Amps Unit Static Electrical Characteristics Symbol Characteristic /...IFSM Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave,...
Description Thunderbolt IGBT

File Size 231.51K  /  9 Page

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    SEMIX854GB176HDS08

Semikron International
http://
Part No. SEMIX854GB176HDS08
OCR Text ... Eoff Rth(j-c) per IGBT ICnom = 600A VGE = 15V chiplevel Tj = 25C Tj = 125C Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 5.2 Tj = 25C Tj = 125C f = 1MHz f = 1MHz f = 1MHz 52.8 2.20 1.75 5600 1.25 340 80 395 890 155 235 0.045 2 2.45 1 0.9...
Description Trench IGBT Modules

File Size 182.46K  /  5 Page

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