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INFINEON[Infineon Technologies AG]
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| Part No. |
IPP05N03L IPB05N03L
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| OCR Text |
..., ID=40A
-
7.9 18.5 36 34.8 3.2
10.5 nC 23.1 45 43.5 nC V
V DD=15V, ID=40A, V GS=0 to 5V V DS=15V, ID=40A, V GS=0V
V(plateau) V DD=15V, ID=40A
IS
TC=25C
-
0.95 46.5 55.5
80 320
A
1.26 V 58.1 ns 69.4 nC
... |
| Description |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS Buck converter series ?OptiMOSPowerMOSFET.30V.TO-220.RDSon=5.2mOhm.80A.LL?
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 5.2mOhm, 80A, LL
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| File Size |
449.26K /
8 Page |
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it Online |
Download Datasheet
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Infineon Technologies A...
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| Part No. |
IPD60R360P7
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| OCR Text |
...9a, t j =25c see table 8 maximum diode commutation speed di f /dt - - 900 a/ m s v ds =0...400v, i sd <=9a, t j =25c see ...40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70m thickness) copper area for drain connection ... |
| Description |
600V CoolMOSa P7 Power Transistor
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| File Size |
1,059.35K /
14 Page |
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it Online |
Download Datasheet
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Infineon Technologies A...
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| Part No. |
IPD60R280P7
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| OCR Text |
...drain current 1) i d - - - - 12 8 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 36 a t c =25c avalanche energy, single pulse e ...40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70m thickness) copper area for drain connection ... |
| Description |
600V CoolMOSa P7 Power Transistor
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| File Size |
1,041.72K /
14 Page |
View
it Online |
Download Datasheet
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