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Infineon Technologies A...
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Part No. |
IPD80R900P7
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OCR Text |
800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years p... |
Description |
800v CoolMOSa P7 Power Transistor
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File Size |
1,151.50K /
13 Page |
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it Online |
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Infineon Technologies A...
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Part No. |
IPD80R750P7
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OCR Text |
800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years p... |
Description |
800v CoolMOSa P7 Power Transistor
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File Size |
1,130.95K /
13 Page |
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it Online |
Download Datasheet
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Infineon Technologies A...
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Part No. |
IPD80R600P7
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OCR Text |
800vcoolmosap7powertransistor thelatest800vcoolmos?p7seriessetsanewbenchmarkin800v superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfrominfineonsover18years p... |
Description |
800v CoolMOSa P7 Power Transistor
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File Size |
1,143.34K /
13 Page |
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it Online |
Download Datasheet
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International Rectifier
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Part No. |
IRHY7G30CMSE
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OCR Text |
...A VDS > 15V, IDS = 0.76A VDS = 800v ,VGS=0V VDS = 800v, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =12V, ID = 1.2A VDS = 300V VDD = 500V, ID = 1.2A, VGS =12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage 1000 BV DSS/T J Temperature... |
Description |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
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File Size |
108.18K /
8 Page |
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it Online |
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International Rectifier
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Part No. |
IRG4PH50KDPBF IRG4PH50KDPBF-15
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OCR Text |
...TJ = 25C ns 300 IC = 24A, VCC = 800v 300 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ and diode reverse recovery 7.9 See Fig. 9,10,18 -- s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 -- TJ = 150C, See Fig. 10,11,18 -- IC = 24A, V... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 45 A, 1200 V, N-CHANNEL IGBT, TO-247AC
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File Size |
673.46K /
11 Page |
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it Online |
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Price and Availability
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