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75010 LQ150X1 SIHFBE20 IRFF133 LQ150X1 LN2004 SLA909F SB170
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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...l is changed. (before) DNU --> (after) N.C 2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36) 3. Add the data protection Vcc guidence for 1.8V device - below about 1.1V. (Page 37) 4. Add the specification of Block Lock sc...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    NLPR01S01A-E

NICHIA CORPORATION
Part No. NLPR01S01A-E
OCR Text ... into a socket. measured after aging (conditions: ta = 25c, i f = 20 ma, 200 hours) (3) lumen maintenance remain in the rage of 3% from the initial value. after 100 hours of use. ta = 25c, led drive curr...
Description SPECIFICATIONS FOR NICHIA LUMINOUS INTENSITY RED STANDARD LED

File Size 679.07K  /  12 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ... available from work week 23 or after. Workaround : Relax the relevant timing parameters according to the table. Table Parameters Specification Relaxed Condition tWC 45 80 tWH 15 20 tWP 25 60 tRC 50 80 tREH 15 20 tRP 25 60 UNIT : ns ...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0

Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
Part No. K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text ...and another for erase-execution after block address loading. The 32M byte physical space requires 25 addresses, thereby requiring three cycles for byte-level addressing: column address, low row address and high row address, in that order. P...
Description From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory

File Size 350.10K  /  26 Page

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    K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0

Samsung Electronic
Samsung semiconductor
Part No. K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text ...and another for erase-execution after block address loading. The 32M byte physical space requires 25 addresses, thereby requiring three cycles for byte-level addressing: column address, low row address and high row address, in that order. P...
Description 32M x 8 Bit NAND Flash Memory

File Size 607.24K  /  29 Page

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    LC66356B LC662312A LC662316A LC66P2516 LC66516B LC66566A LC66508B LC662106A LC662108A LC66406A LC66408A LC66356A LC66251

Sanyo Electric Co., Ltd.
Eutech Microelectronics, Inc.
SANYO[Sanyo Semicon Device]
http://
Part No. LC66356B LC662312A LC662316A LC66P2516 LC66516B LC66566A LC66508B LC662106A LC662108A LC66406A LC66408A LC66356A LC662512A LC662516A LC665316A LC665312A LC662306A LC662308A LC66306A LC665306A LC66E2516 LC66358A LC66358B LC66P5316 LC662104A LC662304A LC662508A LC66304A LC66308A LC66354A LC66354B LC66354C LC66354S LC66356C LC66356S LC66358C LC66358S LC66404A LC66506B LC66512B LC665304A LC665308A LC66556A LC66556B LC66558A LC66558B LC66562A LC66562B LC66566B LC66E2108 LC66E2316 LC66E308 LC66E408 LC66E516 LC66E5316 LC66P2108 LC66P2316 LC66P308 LC66P408 LC66P516 LC662104A/662106A/662108A LC662104AMFP30 LC662108AMFP30 LC662106AMFP30 LC662106ADIP30 LC662104ADIP30 LC662108ADIP30 LC662104AS
OCR Text ...yc = 1 s) * Value of timer 0 after a reset (Including the value after hold mode Set to FF0. is cleared) * DTMF generator * Inverter array * SIO1 * Three-value inputs/comparator inputs * Three-state output from P31 and P32 * Using P0 to c...
Description Four-Bit Single-Chip Microcontrollers with 4, 6, and 8 KB of On-Chip ROM 四位单片机与4,6微控制器 KB的片上ROM
Four-Bit Single-Chip Microcontrollers with 4/ 6/ 8/ 12/ and 16 KB of On-Chip ROM
4-Bit Microcontroller
Microcontroller 微控制器
Four-Bit Single-Chip Microcontrollers with 4/6/and 8
Four-Bit Single-Chip Microcontrollers with 8 12 and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4 6 8 12 and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-Chip ROM
Four-Bit Single-Chip Microcontrollers with 4 6 and 8 KB of On-Chip ROM
Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip EPROM
Four-Bit Single-Chip Microcontroller with 16 KB of On-Chip OTP PROM
12 and 16-kbyte on-chip ROM capacities CMOS 4-bit single-chip microcontrollers

File Size 103.04K  /  13 Page

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    INTEGRATED SILICON SOLUTION INC
Part No. IS41LV8200A-50J
OCR Text ...tate during the cycle. power-on after application of the v dd supply, an initial pause of 200 s is required followed by a minimum of eight initialization cycles (any combination of cycles contain- ing a ras signal). during power-on, it i...
Description 2M X 8 EDO DRAM, 50 ns, PDSO28

File Size 126.75K  /  20 Page

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    LM75DM-33R2 LM75DM-50R2 ON0319 LM75

ONSEMI[ON Semiconductor]
Part No. LM75DM-33R2 LM75DM-50R2 ON0319 LM75
OCR Text ...the LM75. The host releases SDA after transmitting eight bits then generates a ninth clock cycle to allow the LM75 to pull the SDA line LOW to acknowledge that it successfully received the previous eight bits of data or address. Data Byte ...
Description 2-Wire Serial Temperature Sensor and Monitor DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 3Cel, SQUARE, SURFACE MOUNT
From old datasheet system

File Size 150.47K  /  12 Page

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    NANYA TECHNOLOGY CORP
Part No. NT5DS64M8AF-6K
OCR Text ...t be followed: v ddq is driven after or with v dd such that v ddq < v dd + 0.3v v tt is driven after or with v ddq such that v tt < v ddq + 0.3v v ref is driven after or with v ddq such that v ref < v ddq + 0.3v the dq and dqs...
Description 64M X 8 DDR DRAM, 0.7 ns, PBGA60

File Size 2,293.16K  /  76 Page

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