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bvcer Datasheet PDF File

For bvcer Found Datasheets File :: 511 Search Time::1.125ms
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				Advanced Semiconductor ASI
Part No.	ASI3005
OCR Text	... CHARACTERISTICS SYMBOL BVCBO bvcer BVEBO ICBO hFE Cob PG C TC = 25 C NONETEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IE = 10 mA VCB = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 5.0 W IC = 500 mA f = 1.0 MHz f = 3.0 GHz RBE = 10 ...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	14.08K / 1 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	SD1460 2812
OCR Text	...ue Min. Typ. Max. Unit BVCBO bvcer BVCEO BVEBO hFE IC = 100mA IC = 100mA IC = 100mA IE = 20mA VCE = 5V IE = 0mA RBE = 10 IB = 0mA IC = 0mA IC = 1A 60 55 25 4.0 20 -- -- -- -- -- -- -- -- -- 150 V V V V -- DYNAMIC Sy...
Description	From old datasheet system RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS
File Size	65.97K / 5 Page	View it Online	Download Datasheet

				MICROSEMI[Microsemi Corporation]
Part No.	2N3866_2N3866A MSC1067 2N3866A 2N3866
OCR Text	... = 25C) STATIC (off) Symbol bvcer BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Volt...
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS From old datasheet system
File Size	327.85K / 5 Page	View it Online	Download Datasheet

				Advanced Semiconductor ASI
Part No.	2N3866A
OCR Text	... CHARACTERISTICS SYMBOL BVCEO bvcer BVEBO ICEX ICEO IEBO hFE VCE(SAT) ft COB GPE c IC = 5.0 mA IC = 5.0 mA IC = 100 A VCE = 55 V VCE = 30 V VCE = 28 V VEB = 3.5 V VCE = 5.0 V IC = 100 mA VCE = 15 V VCB = 28 V VCC = 28 V TC = 25 C O ...
Description	NPN SILICON HIGH FREQUENCY TRANSISTOR
File Size	27.70K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor ASI
Part No.	2N5109
OCR Text	... CHARACTERISTICS SYMBOL BVCEO bvcer BVCBO ICEX ICEO IEBO hFE VCE(SAT) ft COB NF Gve Pin IC = 5.0 mA IC = 5.0 mA IC = 100 A VCE = 35 V VCE = 15 V VCE = 15 V VEB = 3.0 V VCE = 15 V VCE = 5.0 V IC = 100mA VCE = 15 V VCB = 15 V TA = 25 C ...
Description	NPN SILICON HIGH FREQUENCY TRANSISTOR
File Size	27.82K / 1 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	2N5109 MSC1304
OCR Text	...STATIC (off) Symbol BVCEO(sus) bvcer(sus) ICEO IEBO Test Conditions Min. Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Emitter Sustaining Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Collector Cutoff Current (VCE = 15 Vdc, I...
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS From old datasheet system
File Size	279.19K / 5 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	AM82731-012 2767
OCR Text	.... Typ. Max. Unit BVCBO BVEBO bvcer ICES hFE IC = 7mA IE = 1mA IC = 7mA VCE = 40V VCE = V IE = 0mA IC = 0mA RBE = 10 IC = 600mA 55 3.5 55 -- 30 -- -- -- -- -- -- -- -- 5 300 V V V mA -- DYNAMIC Value Symbol Test Cond...
Description	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS From old datasheet system RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管)
File Size	55.83K / 3 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	AM82731-050 2770
OCR Text	.... Typ. Max. Unit BVCBO BVEBO bvcer ICES hFE IC = 25mA IE = 5mA IC = 25mA VCE = 40V VCE = 5V IE = 0mA IC = 0mA RBE = 10 IC = 3A 55 3.5 55 -- 30 -- -- -- -- -- -- -- -- 20 -- V V V mA -- DYNAMIC Symbol Test Conditions...
Description	RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管) From old datasheet system S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
File Size	59.93K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGS14C40L IRGB14C40L IRGSL14C40L
OCR Text	...in Typ Max 370 400 10 12 15 100 bvcer Emitter-to-Collector Breakdown Voltage R1 R2 Gate Series Resistance Gate-to-Emitter Resistance 430 Unit V V A A V ohm K ohm I G=2m A IRGS14C40L IRGSL14C40L IRGB14C40L Conditions R G = 1K ohm, I C=7A...
Description	430V Low-Vceon Discrete IGBT in a TO-262 package 430V Low-Vceon Discrete IGBT in a D2-Pak package 430V Low-Vceon Discrete IGBT in a TO-220AB package IGBT with on-chip Gate-Emitter and Gate-Collector clamps INSULATED GATE BIPOLAR TRANSISTOR
File Size	154.13K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	MSC81020 2736
OCR Text	.... Typ. Max. Unit BVCBO BVEBO bvcer I CBO hFE DYNAMIC Symbol IC = 5mA IE = 1mA IC = 15mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10 IC = 1000mA 45 3.5 45 -- 15 -- -- -- -- -- -- -- -- 5.0 120 V V V mA -- Test Cond...
Description	From old datasheet system RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
File Size	88.47K / 5 Page	View it Online	Download Datasheet

For bvcer Found Datasheets File :: 511 Search Time::1.125ms
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