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MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
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| Part No. |
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
206.08K /
8 Page |
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it Online |
Download Datasheet
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MTP75N03HDL MTP75N03HDL_D ON2641
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
OSCILLATORS 100PPM -10 70 3.3V 4 8.000MHZ TS HCMOS 5X7MM 4PAD SMD 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS
From old datasheet system
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| File Size |
235.16K /
8 Page |
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it Online |
Download Datasheet |
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ONSEMI[ON Semiconductor]
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| Part No. |
NTQS6463R2 NTQS6463
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
Power MOSFET 6.2 Amps, 20 Volts
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| File Size |
66.70K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
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| Part No. |
MTP6P20E_D MTP6P20E ON2638
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
From old datasheet system
TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHM
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| File Size |
215.85K /
8 Page |
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it Online |
Download Datasheet |
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ON Semi
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| Part No. |
MTP6P20E_D ON2637
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| OCR Text |
...eds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which... |
| Description |
TMOS POWER FET 6.0 AMPERES 200 VOLTS
From old datasheet system
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| File Size |
184.59K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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