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PN424901 SFD605G DS1216D 90SC15B SP8043W 20751 DS1216D A51880
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    NJM2625A

New Japan Radio
Part No. NJM2625A
OCR Text ...120mv or more is recommended in consideration of a noise or temperature change. pre-driver outputs are all off if 3 set of hall device inputs are simultaneously set to "h" or "l." when you use not a hall device but digital output like ...
Description 3-Phase DC Brushless Motor Pre-Drivers Technical Information

File Size 125.49K  /  5 Page

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    SSM3K324R

Toshiba Semiconductor
Part No. SSM3K324R
OCR Text ...ase take h eat dissipation into consideration. unit: mm jedec D jeita D toshiba 2-3z1a weight: 11 mg (typ.) 1. gate 2. source 3. drain sot-23f kfd 1 2 3 1 2 3 ssm3k324r 2012-12-21 2 electrical charact...
Description TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

File Size 258.39K  /  6 Page

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    SSM6E02TU

Toshiba Semiconductor
Part No. SSM6E02TU
OCR Text ...). ) be sure to take this into consideration when using the device. handling precaution when handling individual devices (which are not yet mount ed on a circuit board), ensure that the environment is protected against static elect...
Description Silicon P-Channel MOS Type N-Channel MOS Type

File Size 213.98K  /  8 Page

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    SSM6J213FE

Toshiba Semiconductor
Part No. SSM6J213FE
OCR Text ... < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic ...
Description    TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
Small-signal MOSFET

File Size 214.47K  /  6 Page

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    SSM3K15AFU

Toshiba Semiconductor
Part No. SSM3K15AFU
OCR Text ... (on) ) please take this into consideration for using the device. do not use this device under avalanche mode. it may cause the device to break down. handling precaution when handling individual devices (which are not yet moun...
Description Field Effect Transistor
Small-signal MOSFET

File Size 224.24K  /  5 Page

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Part No. SSM5G09TU
OCR Text ...). ) be sure to take this into consideration when using the device. the v gs recommended voltage for turning on this product is -2.5v or higher. t on t off (b) v in (c) v out 0 v ? 2.5 v v dd v ds (on) t r t f 10% 90% 90% 1...
Description 1500 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

File Size 270.69K  /  10 Page

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    SSM6L39TU

Toshiba Semiconductor
Part No. SSM6L39TU
OCR Text ...h < v gs(on). take this into consideration when using the device. q2 usage considerations let v th be the voltage applied between gate and sour ce that causes the drain current (i d ) to below ( ? 1 ma for the q2 of the ssm6l39...
Description Field Effect Transistor

File Size 238.13K  /  9 Page

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