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X4580CW FN4655 25AA01 FN4655 L6911E07 AOP600L 02N60 12DH6
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    MAXIM[Maxim Integrated Products]
Part No. DS3050W-100 DS3050W
OCR Text ... related edges going low to the earlier of the two related edges going high. tWR1 and tDH1 are measured from WE going high. tWR2 and tDH2 are measured from CE going high for SRAM writes or CS going high for RTC writes. tDS is measured from ...
Description 3.3V Single-Piece 4Mb Nonvolatile SRAM with Clock

File Size 210.03K  /  18 Page

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    MAXIM[Maxim Integrated Products]
Part No. DS3065W-100 DS3065W
OCR Text ... related edges going low to the earlier of the two related edges going high. tWR1 and tDH1 are measured from WE going high. tWR2 and tDH2 are measured from CE going high for SRAM writes or CS going high for RTC writes. tDS is measured from ...
Description From old datasheet system
3.3V Single-Piece 8Mb Nonvolatile SRAM with Clock

File Size 294.23K  /  18 Page

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    HMN12816D-85I HMN12816D HMN12816D-120 HMN12816D-120I HMN12816D-150 HMN12816D-150I HMN12816D-70 HMN12816D-70I HMN12816D-8

Electronic Theatre Controls, Inc.
Hanbit Electronics Co.,Ltd
ETC[ETC]
List of Unclassifed Manufacturers
Part No. HMN12816D-85I HMN12816D HMN12816D-120 HMN12816D-120I HMN12816D-150 HMN12816D-150I HMN12816D-70 HMN12816D-70I HMN12816D-85
OCR Text ...rite cycle is terminated by the earlier rising edge of /CEU and/or /CEL, or WE. All address inputs must be kept valid throughout the write cycle. /WE must return to the high state for a minimum recovery time (tWR ) before another cycle can ...
Description Non-Volatile SRAM MODULE 2Mbit (128K x 16-Bit), 40pin-Dip, 5V 非易失性SRAM模块即可移植28K的x 16位)0pin浸,5V

File Size 143.52K  /  9 Page

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    Sanyo
Part No. LA4906
OCR Text ...ing region to about 1/2 that of earlier class B amplifier ICs. This can contribute significantly to miniaturization and weight reduction in the heat sink and to reduction of the heat generated within the end product case. * Uses a single-vo...
Description Monolithic Linear IC

File Size 300.30K  /  10 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KMM372V404BS
OCR Text ...ASC, tCAH are referenced to the earlier CAS falling edge. 13. tCP is specified from the last CAS rising edge in the previous cycle to the first CAS falling edge in the next cycle. 14. tCWD is referenced to the later CAS falling edge at word...
Description 4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V

File Size 414.20K  /  19 Page

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    Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. LA4906
OCR Text ...ing region to about 1/2 that of earlier class B amplifier ICs. This can contribute significantly to miniaturization and weight reduction in the heat sink and to reduction of the heat generated within the end product case. * Uses a single-vo...
Description 17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Audio Systems

File Size 361.10K  /  10 Page

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    3M Company
Part No. DS1250W-150-IND
OCR Text ...rite cycle is terminated by the earlier rising edge of ce or we . all address input s must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initi...
Description NVRAM (Battery Based) NVRAM中(基于电池

File Size 185.26K  /  11 Page

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    Dallas
Part No. 1225
OCR Text ...rite cycle is terminated by the earlier rising edge of ce or we . all address inputs must be kept valid throughout the write cycle. we must return to the high state for a minimum recovery time (t wr ) before another cycle can be initi...
Description Search To DS1225

File Size 184.30K  /  10 Page

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