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  esw Datasheet PDF File

For esw Found Datasheets File :: 282    Search Time::1.828ms    
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    DIM200WKS12-A00009

Dynex Semiconductor
Part No. DIM200WKS12-A00009
OCR Text ... IC = 200A Switching energy, esw - (mJ) 30 25 20 15 10 Switching energy, esw - (mJ) 35 30 25 20 15 10 5 0 0 50 100 150 Collector current, IC - (A) Eon Eoff Erec 200 5 0 4 Eon Eoff Erec 10 6 8 Gate resistance, Rg - (O...
Description IGBT Chopper Module - Upper Arm Control

File Size 203.02K  /  8 Page

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    DIM200WKS12-A000

Dynex Semiconductor
Part No. DIM200WKS12-A000
OCR Text ... = 200A 45 Switching energy, esw - (mJ) 30 25 20 15 10 Switching energy, esw - (mJ) Eon Eoff Erec 0 50 100 150 Collector current, IC - (A) 200 35 30 25 20 15 10 5 0 5 0 4 Eon Eoff Erec 10 6 8 Gate resistance, Rg - (Ohm...
Description IGBT Chopper Module - Upper Arm Control

File Size 164.46K  /  8 Page

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    DIM200WHS17-A000

Dynex Semiconductor
Part No. DIM200WHS17-A000
OCR Text ...Vcc = 900V 60 Switching energy, esw - (mJ) 50 40 30 20 10 0 0 Eon Eoff Erec 20 40 60 80 100 120 140 160 180 200 Collector current, IC - (A) Conditions: Tc = 125C, IC = 100A, 120 Vcc = 900V 100 Switching energy, esw - (mJ) 80 ...
Description Half Bridge IGBT Module

File Size 148.25K  /  8 Page

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    DIM200WHS12-E000

Dynex Semiconductor
Part No. DIM200WHS12-E000
OCR Text ... Eoff Erec Switching energy, esw - (mJ) Switching energy, esw - (mJ) 50 70 60 50 40 30 20 40 Eon 30 Eoff Erec 20 10 10 0 0 100 200 300 Collector current, IC - (A) 400 0 0 4 8 12 16 20 22 28 32 Gate resistan...
Description Half Bridge IGBT Module

File Size 174.74K  /  8 Page

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    DIM200PHM33-F000

DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
Part No. DIM200PHM33-F000
OCR Text ...e = 15V 1000 Switching energy, esw - (mJ) Conditions: Tc = 125C, Rg(on) = 7.5 Ohms, Rg(off) = 16.5 Ohms Cge = 56nF, Vcc = 1800V, 300 V = 15V ge Switching energy, esw - (mJ) 800 Eon (mJ) Eoff (mJ) Erec (mJ) 200 600 400 ...
Description Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT

File Size 140.00K  /  9 Page

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    CM1000DU-34NF04

Mitsubishi Electric Semiconductor
Part No. CM1000DU-34NF04
OCR Text ...00 GATE CHARGE QG (nC) IC-esw (TYPICAL) 103 7 5 3 2 RG-esw (TYPICAL) 103 7 5 Eon Eoff Eon, Eoff, Err (mJ/pulse) Eon, Eoff, Err (mJ/pulse) Err Eoff Eon 3 2 102 7 5 3 2 Err 102 7 5 3 2 101 7 5 3 2 1...
Description HIGH POWER SWITCHING USE

File Size 48.98K  /  4 Page

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    DIM800DDM12 DIM800DDM12-A000

Dynex Semiconductor
Part No. DIM800DDM12 DIM800DDM12-A000
OCR Text ...00A 300 Switching energy, esw - (mJ) Switching energy, esw - (mJ) 250 200 150 100 50 0 2 4 8 6 10 Gate resistance, Rg - (ohms) Eon Eoff Erec 12 Fig. 5 Typical switching energy vs collector current Fig. 6 ...
Description 1200V dual switch IGBT module
Dual Switch IGBT Module Preliminary Information

File Size 171.12K  /  10 Page

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    PRFMB75E6

Nihon Inter Electronics Corporation
Part No. PRFMB75E6
OCR Text ...nductive Load Switching Loss esw (mJ/Pulse) Switching Loss esw (mJ/Pulse) 6 VCC=300V RG=12 VGE=15V TC=125C Inductive Load EON 30 EOFF 10 4 EON ERR EOFF 3 2 ERR 1 0 0 25 50 75 100 ...
Description IGBT Module-Dual

File Size 240.49K  /  4 Page

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    PHMB600BS12 PHMB600BS12C

Nihon Inter Electronics Corporation
Part No. PHMB600BS12 PHMB600BS12C
OCR Text ...nductive Load Switching Loss esw (mJ/Pulse) Switching Loss esw (mJ/Pulse) 200 VCC=600V RG=2.7 VGE=15V TC=125C Inductive Load 300 EON EOFF 150 EON 100 100 EOFF ERR ERR 30 50 0 0 200 400 600 800 1000...
Description IGBT Module-Dual

File Size 327.20K  /  4 Page

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    PDMB600BS12

Nihon Inter Electronics Corporation
Part No. PDMB600BS12
OCR Text ...nductive Load Switching Loss esw (mJ/Pulse) Switching Loss esw (mJ/Pulse) 200 VCC=600V RG=2.7 VGE=15V TC=125C Inductive Load 300 EON EOFF 150 EON 100 100 EOFF ERR ERR 30 50 0 0 200 400 600 800 1000...
Description IGBT Module-Dual

File Size 269.72K  /  4 Page

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For esw Found Datasheets File :: 282    Search Time::1.828ms    
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