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  free-wheel Datasheet PDF File

For free-wheel Found Datasheets File :: 2087    Search Time::3.625ms    
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    Powerex Power Semicondu...
Part No. CM75TL-12NF
OCR Text ...-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(...
Description    Six IGBTMOD NF-Series Module 75 Amperes/600 Volts

File Size 469.78K  /  4 Page

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    CM100TU-12H09

Mitsubishi Electric Semiconductor
Part No. CM100TU-12H09
OCR Text ...nti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is sho...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 112.01K  /  4 Page

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    CM100E3U-12H09 CM100E3U-12H

Mitsubishi Electric Semiconductor
Part No. CM100E3U-12H09 CM100E3U-12H
OCR Text ...nti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is sho...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 71.57K  /  4 Page

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    FM600TU-2A09

Mitsubishi Electric Semiconductor
Part No. FM600TU-2A09
OCR Text ...the anti-parallel, source-drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: Case Temperature (Tc') measured point is just under th...
Description MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE

File Size 113.95K  /  5 Page

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    FM400TU-2A09

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. FM400TU-2A09
OCR Text ...the anti-parallel, source-drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: Case Temperature (Tc') measured point is just under th...
Description MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE

File Size 114.00K  /  5 Page

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    CM200DU-34KA

Mitsubishi Electric Semiconductor
Part No. CM200DU-34KA
OCR Text ...-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. P...
Description HIGH POWER SWITCHING USE

File Size 73.62K  /  4 Page

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    CM200DU-34KA09

Mitsubishi Electric Semiconductor
Part No. CM200DU-34KA09
OCR Text ...nti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C....
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 79.57K  /  4 Page

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    CM200DU-12NFH

Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Part No. CM200DU-12NFH
OCR Text ...-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. No...
Description From old datasheet system
HIGH POWER SWITCHING USE 大功率开关使

File Size 64.04K  /  4 Page

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    CM200DU-12H09

Mitsubishi Electric Semiconductor
Part No. CM200DU-12H09
OCR Text ...nti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is sho...
Description IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

File Size 95.35K  /  4 Page

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For free-wheel Found Datasheets File :: 2087    Search Time::3.625ms    
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