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For gate hex Found Datasheets File :: 2547 Search Time::2.969ms
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				Advanced Power Technology
Part No.	APT8014JLL
OCR Text	...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.73K / 2 Page	View it Online	Download Datasheet

				http:// ADPOW[Advanced Power Technology]
Part No.	APT8015JVFR APT8015
OCR Text	...tching speeds through optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Fast Recovery Body Diode * Lower Leakag...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 44A 0.150 Ohm
File Size	77.92K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8015 APT8015JVR
OCR Text	...tching speeds through optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 1...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS V 800V 44A 0.150 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	75.34K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8018JN
OCR Text	...@ TC = 25C Pulsed Drain Current gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor 1 SINGLE DIE ISOTOP(R) PAC...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS IV 800V 40A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	60.06K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8020JFLL APT6017JFLL
OCR Text	...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.28K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8020JLL
OCR Text	...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.75K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024JFLL
OCR Text	...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.21K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL
OCR Text	...erent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower gate Charge, Qg MAXIMUM RATING...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.72K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8028JVR APT5010JVR
OCR Text	...tching speeds through optimized gate layout. SO ISOTOP (R) 2 T- 27 "UL Recognized" * Faster Switching * Lower Leakage * 1...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POWER MOS V 800V 28A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030JN APT8035JN
OCR Text	...@ TC = 25C Pulsed Drain Current gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction...hex Nut M4 (4 places) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.99...
Description	POTENTIOMETER, 1.5W 50K POTENTIOMETER, 1.5W 50K; VARIABLE ROTARY WIREWOUND; RESISTANCE, TRACK:50KR; SERIES:535; POWER RATING:1.5W; CASE STYLE:PANEL MOUNT; DIAMETER, BODY:22.2MM; DIAMETER, SHAFT:6.35MM; TURNS, NO. RoHS Compliant: Yes N沟道增强型高压功率MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS V 800V 27.0A 0.30/0.35 Ohm
File Size	61.59K / 4 Page	View it Online	Download Datasheet

For gate hex Found Datasheets File :: 2547 Search Time::2.969ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |