|
|
 |
NXP Semiconductors N.V.
|
Part No. |
CGD985HCI
|
OCR Text |
...ction field effect transistor (hfet) gaas dies. 1.2 features and benefits |
Description |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
File Size |
82.02K /
9 Page |
View
it Online |
Download Datasheet
|
|
|
 |
TriQuint Semiconductor, Inc.
|
Part No. |
TGF4260-EPU
|
OCR Text |
hfet preliminary rf performance l 9600 m x 0.5 m l nominal pout of 37 - dbm at 6.0 ghz l nominal gain of 9.5 - db at 6.0 ghz l nominal pae of 52 % at 6.0 ghz l suitable for high reliability applications l 0,572 x 2,324 x 0,102 mm (0.023 x... |
Description |
9.6mm Discrete hfet C BAND, Si, RF SMALL SIGNAL, hfet
|
File Size |
90.77K /
1 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|