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  id-23a Datasheet PDF File

For id-23a Found Datasheets File :: 295    Search Time::1.094ms    
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    KI1539DL

Guangdong Kexin Industrial Co.,Ltd
Part No. KI1539DL
OCR Text ...6 0.23 0.27 0.14 Symbol VDS VGS ID 0.63 0.45 0.54 0.43 1 -0.25 0.3 0.16 -55 to 150 -0.23 0.27 0.14 N-Channel 5 secs Steady State 30 20 -0.45...23A, VGS = 0 V IS = -0.23A, VGS = 0 V N-Channel VDS = 15 V, VGS = 10 V, ID = 0.59A 300 s, duty cy...
Description Complementary 30-V (D-S) MOSFET

File Size 51.47K  /  2 Page

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    NDB6030 NDP6030

FAIRCHILD[Fairchild Semiconductor]
Part No. NDB6030 NDP6030
OCR Text ... Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25C unless otherwise noted NDP6030 30 30 20 46 135 75 0.5 -65 ...23A 1.5 ID = 23A 0.06 R DS(ON), NORMALIZED VGS = 10V 1.25 0.04 1 0.75 0.02...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 55.29K  /  4 Page

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    IRFP254N

International Rectifier
IRF
Part No. IRFP254N
OCR Text ...= 250V RDS(on) = 125m G S ID = 23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f...
Description Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

File Size 221.14K  /  8 Page

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    FDS7066N7

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS7066N7
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unles...23A VGS = 10V ID = 11.5A 0.012 0.01 0.008 TA = 125oC 0.006 0.004 0.002 0 125 150 175 2 4 6 8 10 T...
Description 30V N-Channel PowerTrench MOSFET

File Size 165.00K  /  5 Page

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    BSP92P07

Infineon Technologies AG
Infineon Technologies A...
Part No. BSP92P07
OCR Text ... Product Summary VDS RDS(on) ID -250 12 -0.26 PG-SOT-223 4 V A 3 Type BSP 92 P Package PG-SOT-223 Pb-free Yes Tap...23A Drain-source on-state resistance VGS =-10V, ID =-0.26A 1Device on 40mm*40mm*1.5mm epoxy P...
Description SIPMOS Small-Signal-Transistor

File Size 103.41K  /  8 Page

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    APT10045B2FLL APT10045LFLL

ADPOW[Advanced Power Technology]
Part No. APT10045B2FLL APT10045LFLL
OCR Text ...E MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...23A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.79K  /  2 Page

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    SPD30N03S2L-20

Infineon Technologies AG
Part No. SPD30N03S2L-20
OCR Text ID 30 20 30 P- TO252 -3-11 V m A * Enhancement mode * Logic Level * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal...23A Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25C V DS=30V, VGS=0V, Tj=125C A 0.01...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 20mOhm, 30A, LL
OptiMOS Power-Transistor

File Size 261.11K  /  8 Page

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    APT10045B2LL APT10045LLL

ADPOW[Advanced Power Technology]
Part No. APT10045B2LL APT10045LLL
OCR Text ...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage B2LL T-MAXTM TO-264 LLL...23A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 55.81K  /  2 Page

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For id-23a Found Datasheets File :: 295    Search Time::1.094ms    
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