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POINN[Power Innovations Ltd]
POINN[Power Innovations Limited]
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| Part No. |
TISP3290
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| OCR Text |
... SECONDARY PROTECTION
q
Ion-implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
DEVICE `3290 V(Z) V 200 V(BO) V 290
TO-220 PACKAGE (TOP VIEW)
A(T) C(G) B(R)
1 2 3
q
Planar Passivated J... |
| Description |
DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
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| File Size |
109.48K /
5 Page |
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it Online |
Download Datasheet
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BOPOLARICS
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| Part No. |
BPT1819E16
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| OCR Text |
...y are assured by the use of ion implanted junctions, ion implanted ballast resistors and gold metallization. absolute maximum ratings: symbol parameters rating units v ces collector-base voltage 40 ... |
| Description |
NPN silicon microwave power transistor.
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| File Size |
11.81K /
1 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
RURG3020 FN3277
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| OCR Text |
... silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low... |
| Description |
30A/ 200V Ultrafast Diode
30A, 200V Ultrafast Diode
From old datasheet system
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| File Size |
63.66K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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