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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4D553238F K4D553238F-GC
OCR Text	... 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock * Differential clock input * No Wrtie-Interrupted by Read Function * 4 DQS's ( 1DQS / Byte ) * Data I/O tra...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
File Size	307.09K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4D551638D K4D551638D-TC K4D551638D-TC2A K4D551638D-TC33 K4D551638D-TC50 K4D551638D-TC36 K4D551638D-TC40 K4D551638D-TC45 K4D551638D-TC60
OCR Text	... 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock * Differential clock input * No Wrtie-Interrupted by Read Function * 2 DQS's ( 1DQS / Byte ) * Data I/O tra...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 CABLE ASSEMBLY; 2.9mm MALE TO 2.9mm MALE; 40 GHz CABLE 56Mbit GDDR SDRAM内存
File Size	228.34K / 18 Page	View it Online	Download Datasheet

				Winbond Electronics Corp Winbond Electronics, Corp.
Part No.	W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6
OCR Text	...e burst length, latency cycle, interleave or sequential burst to maximize its performance. w986432ah is ideal for main memory in high performance applications. features 3.3v 0.3v power supply 524288 words 4 banks 32 bit...
Description	512K x 4 BANKS x 32 BITS SDRAM x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
File Size	1,356.42K / 44 Page	View it Online	Download Datasheet

				意法半导
Part No.	STLC60135
OCR Text	...ta_s_1 o vdd bt4cr receive data interleave 1 94 slr_data_s_0 o vdd bt4cr receive data interleave 0 95 vdd (v ss + 3.3v) power supply 96 slr_val_s o vdd bt4cr receive data valid indicator interleaved 97 slr_data_f_1 o vdd bt4cr receive data ...
Description	TOSCA ADSL DMT TRANSCEIVER
File Size	192.87K / 25 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY57V643220DT-6 HY57V643220DLTP-45 HY57V643220DLTP-5 HY57V643220DLTP-55 HY57V643220DLTP-6 HY57V643220DLTP-7 HY57V643220DT-45 HY57V643220DT-5 HY57V643220DT-55 HY57V643220DT-7 HY57V643220DST-45 HY57V643220DST-5 HY57V643220DST-55 HY57V643220DST-6 HY57V643220DST-7 HY57V643220DLT-45 HY57V643220DLT-5 HY57V643220DLT-55 HY57V643220DLT-6 HY57V643220DLT-7 HY57V643220D HY57V643220DTP-7 HY57V643220DSTP-45 HY57V643220DSTP-5 HY57V643220DSTP-55 HY57V643220DSTP-6 HY57V643220DSTP-7 HY57V643220DTP-45 HY57V643220DTP-5 HY57V643220DTP-55 HY57V643220DTP-6
OCR Text	...st count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined de...
Description	4Banks x 512K x 32bits Synchronous DRAM
File Size	211.20K / 13 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group
Part No.	HYB39S64160AT HYB39S64160AT-8B HYB39S64160AT-10 HYB39S64400AT-10 HYB39S64400AT-8B
OCR Text	...ing the four memory banks in an interleave fashion allows random access operation to occur at higher rate than is possible with standard drams. a sequential and gapless data rate is possible depending on burst length, cas latency and speed...
Description	64 MBit Synchronous DRAM
File Size	685.60K / 53 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY57V641620ET
OCR Text	...st count sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined de...
Description	4-Bank x 1M x 16-Bits SDRAM
File Size	138.01K / 13 Page	View it Online	Download Datasheet

				Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
Part No.	V54C316162VC-6 V54C316162VC V54C316162VC-5 V54C316162VC-55 V54C316162VC-7
OCR Text	...le Wrap Sequence: Sequential or interleave s Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for interleave s UDQM & LDQM for byte masking s Auto & Self Refresh s 2K Refresh Cycles/32 ms s Burst Read with S...
Description	200/183/166/143 MHz 3.3 VOLT, 2K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
File Size	154.41K / 22 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K4X51163PE-FG
OCR Text	... - burst type (sequential & interleave) ? emrs cycle with address key programs - partial array self refresh ( full, 1/2, 1/4 array ) - output driver strength control ( full, 1/2, 1/4, 1/8 ) ? internal temperature compensated...
Description	32Mx16 Mobile DDR SDRAM
File Size	348.12K / 20 Page	View it Online	Download Datasheet

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