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lb 113 Datasheet PDF File

For lb 113 Found Datasheets File :: 632 Search Time::7.859ms
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				IXYS Corporation
Part No.	IXGT6N170A IXGH6N170A IXGH6N170
OCR Text	...e (M3) (TO-247) 1.13/10Nm/lb.in. 300 C 6 4 g g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight ...113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 24...
Description	Low Saturation Voltage Types High Voltage IGBT
File Size	49.91K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTH36P10
OCR Text	...) HDMOSTM process 1.13/10 Nm/lb.in. 6 g * * * Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low ...113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 24...
Description	Standard Power MOSFET
File Size	78.18K / 2 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXFH40N50Q2
OCR Text	...igh power density 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min....113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	552.84K / 5 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation] IXYS, Corp.
Part No.	IXFH74N20 IXFT74N20 IXFH68N20 IXFT68N20
OCR Text	...g torque 300 6 1.13/10 Nm/lb.in. Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) m...113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 24...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS High Performance, 145 MHz FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 68 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
File Size	132.12K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFT80N15Q IXFK80N15Q IXFH80N15Q
OCR Text	...247 TO-264 TO-268 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 10 4 g g g G = Gate S = Source TAB = Drain Features l l Symbol Test...113 .016 .819 .610 0.205 .780 .140 0.232 .170 242 .209 .102 .098 .055 .084 .123 .031 .845 .640 0.225...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class
File Size	123.84K / 2 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFV74N20P IXFV74N20PS IXFH74N20P
OCR Text	...O-247) 300 250 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 6.0 4.0 g g G S G = Gate S = Source D = Drain TAB = Drain D (TAB) Features Sy...113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 24...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS PolarHT HiPerFET Power MOSFET
File Size	690.65K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXGH32N170 IXGT32N170
OCR Text	...unting torque (M3) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless othe...113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 24...
Description	Low Saturation Voltage Types High Voltage IGBT
File Size	571.94K / 5 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXTH3N120
OCR Text	...ing torque 300 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min....113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 24...
Description	High Voltage Power MOSFETs
File Size	128.75K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device http://
Part No.	SBFP540B ENN7436
OCR Text	...JC TR FC CJS VJS MJS CC Cbc Cbe lb Lc Le Value 6.76p 0.4219 0.23794 1m 0 234f 0.81969 0.30232 0.3 2.324n 0.73234 0 0.75 0 100f 4f 100f 0....113.1 105.9 99.2 93.0 86.7 81.5 75.6 70.7 65.5 60.5 56.7 52.3 47.8 44.3 40.2 36.3 32.3 28.7 25.2 21....
Description	Ultrahigh-Frequency Transistors UHF to C Band Low Noise Amplifier, Oscillation Applications
File Size	55.29K / 15 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	IXBH42N170
OCR Text	...) TO-247 AD TO-268 1.13/10Nm/lb.in. Features High Blocking Voltage JEDEC TO-268 surface and JEDEC TO-247 AD Low conduction losses High...113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 24...
Description	High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
File Size	577.60K / 5 Page	View it Online	Download Datasheet

For lb 113 Found Datasheets File :: 632 Search Time::7.859ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |