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IRF[International Rectifier]
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| Part No. |
IRHM8230 IRHM7230
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A. This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. All Pre-Irradiation and Post-Irradiation test condition... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
295.92K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRHMJ8250 IRHMJ3250 IRHMJ4250 IRHMJ7250
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-254AA Tabless
NOT ES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS ... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
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| File Size |
327.23K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHMK57260SE IRHMK57260SE-15
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low-Ohmic TO-254AA Tabless
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MI... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (Low-Ohmic TO-254AA)
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| File Size |
184.90K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHN57250SE
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| OCR Text |
... VGS = 0 during irradiation per mll-STD-750, method 1019, condition A.
Case Outline and Dimensions -- SMD-1
PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel:... |
| Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
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| File Size |
173.24K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHN8130 IRHN7130
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| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and figure 8a and a VDSS bias condition equal to 80% of the device rated voltage per note 7 an... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
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| File Size |
444.31K /
14 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRHN8230 IRHN7230
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| OCR Text |
...te (total dose) environment per mll-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and a VDSS bias condition equal to 80% of the device rated voltage per note 7 and figure 8b. P... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0
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| File Size |
450.04K /
14 Page |
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it Online |
Download Datasheet |
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