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    NCE20N50 NCE20N50F

Wuxi NCE Power Semiconductor Co., Ltd
Part No. nce20N50 nce20N50F
OCR Text nce20N50,nce20N50F Pb-Free Product nce N-Channel Enhancement Mode Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super j...
Description Super Junction MOSFET

File Size 599.71K  /  9 Page

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    NCE3080K

NCEPOWER
Wuxi NCE Power Semiconductor Co., Ltd
Part No. nce3080K
OCR Text nce N-Channel Enhancement Mode Power MOSFET DESCRIPTION The nce3080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS...
Description nce N-Channel Enhancement Mode Power MOSFET

File Size 319.77K  /  7 Page

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    MBR20100CT

Wuxi NCE Power Semiconductor Co., Ltd
Part No. MBR20100CT
OCR Text nce MOS Barrier Rectifier Description This Schottky rectifier has been optimized for low reverse leakage at high temperature, this product special design for high forward and reverse surge capability Schematic diagram General Features ...
Description nce MOS Barrier Rectifier

File Size 168.27K  /  5 Page

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    NCE3050K

NCEPOWER
Wuxi NCE Power Semiconductor Co., Ltd
Part No. nce3050K
OCR Text nce power semiconductor co., ltd page v1.0 1 nce n-channel enhancement mode power mosfet description the nce3050k uses advanced trench technology and design to prov...
Description nce N-Channel Enhancement Mode Power MOSFET

File Size 317.55K  /  7 Page

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    NCE55H11

Wuxi NCE Power Semiconductor Co., Ltd
Part No. nce55H11
OCR Text nce N-Channel Enhancement Mode Power MOSFET DESCRIPTION The nce55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS...
Description nce N-Channel Enhancement Mode Power MOSFET

File Size 333.76K  /  7 Page

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    NCE5549

Wuxi NCE Power Semiconductor Co., Ltd
Part No. nce5549
OCR Text nce N-Channel Enhancement Mode Power MOSFET DESCRIPTION The nce5549 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS ...
Description nce N-Channel Enhancement Mode Power MOSFET

File Size 325.01K  /  7 Page

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    BSS138

Wuxi NCE Power Semiconductor Co., Ltd
Part No. BSS138
OCR Text nce N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES VDS = 50V,ID = 0.22A RDS(ON) < 3 @ VGS=4.5V RDS(ON) < 2 @ VGS=10V Schematic diagram Lead free product is acquired Surface Mount Package Application Direct Logic-Level Int...
Description nce N-Channel Enhancement Mode Power MOSFET

File Size 253.40K  /  7 Page

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    ECJ1VB2A331 ECJ1VB2D331 ECJ1VC2A101 ECJ1VC2A100D ECJ2VB2A682 ECJ2VC2A221 ECJ2VB2A472 ECJ2VB2D472 ECJ2FC2D101 ECJ2VB2A331

Panasonic Semiconductor
Part No. ECJ1VB2A331 ECJ1VB2D331 ECJ1VC2A101 ECJ1VC2A100D ECJ2VB2A682 ECJ2VC2A221 ECJ2VB2A472 ECJ2VB2D472 ECJ2FC2D101 ECJ2VB2A331 ECJ2VC2A150 ECJ2VB2D332 ECJ2VB2D331 ECJ1VC2A220 ECJ2VC2D470 ECJ2VC2A471 ECJ2VC2A680 ECJ1VB2A681 ECJ2VB2D681 ECJ2FC2D331 ECJ1VC2A330 ECJ3FB2D223 ECJ3FB2D153 ECJ2FC2D680 ECJ2FB2D682 ECJ2VB2A332 ECJ2VB2A681 ECJ1VC2A680 ECJ2VC2A330 ECJ1VC2A470 ECJ2VB2A102K ECJ2VB2A102M ECJ2VB2A103K ECJ3VC2A222K ECJ3VC2A152J ECJ3VC2A152K ECJ3VC2A222J ECJ2VC2D470K ECJ3VC2A332K ECJ3VC2A332J ECJ3FB2D223K ECJ2FB2D682M ECJ2FB2D103M ECJ3FB2D153M ECJ3FB2D223M ECJ2FB2D103K ECJ3FB2D153K ECJ2FB2D682K ECJ1VB2A102M ECJ1VB2A221K ECJ1VB2A681K ECJ1VB2D102M ECJ1VB2D331K ECJ1VB2D221K ECJ1VB2A331K ECJ1VB2D221M ECJ1VB2A221M ECJ1VB2A681M ECJ1VB2A102K ECJ1VB2D102K ECJ1VB2A471M ECJ1VB2D681K ECJ1VB2A471K ECJ2FB2A153M ECJ3FB2A223K ECJ3FB2A223M ECJ3FB2A473M ECJ3FB2A333M ECJ2FB2A153K ECJ2VB2D152K ECJ2VB2D152M ECJ2VB2D222M ECJ2VB2D472K ECJ2VB2D471K ECJ2VB2D102M ECJ2VB2D221M ECJ2VB2D222K ECJ2VB2D332K ECJ2VB2A221M ECJ2VB2A222M ECJ2VB2A331K ECJ2VB2A332M ECJ2VB2A222K ECJ2VB2A152K ECJ2VB2A152M ECJ2VB2A221K ECJ2VB2A331M ECJ2VB2A471 ECJ2VB2A471K ECJ2VB2A103M ECJ2VB2A332K ECJ3YB2A104 ECJ3YB2A104K ECJ3YB2A104M ECJ4YB2A2
OCR Text ... eff. (ppm/c) rate of capacita nce change at each temp. (%) ?25 c 85 c max. min. max. min. cch0 60 0.49 ?0.27 0.39 ?0.39 temperature characteristics class 1 class 2 temp erature characteristic code temp erature characteristics ca...
Description Multilayer Ceramic Capacitors(100V, 200V Series)

File Size 201.69K  /  4 Page

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    Z16F2810VH20SG Z16F2810VH20AG Z16F2810VH20EG Z16F2810AG20AG Z16F2810AG20EG UM0171 UM0188 Z16F6411AL20AG Z16F6411AL20EG Z

Zilog, Inc.
Part No. Z16F2810VH20SG Z16F2810VH20AG Z16F2810VH20EG Z16F2810AG20AG Z16F2810AG20EG UM0171 UM0188 Z16F6411AL20AG Z16F6411AL20EG Z16F6411AL20SG Z16F6411FI20AG Z16F6411FI20EG Z16F6411FI20SG Z16F2810AG20SG Z16F2810FI20AG Z16F2810FI20EG Z16F2810FI20SG Z16F3211FI20AG Z16F3211AL20AG Z16F3211AL20EG Z16F3211AL20SG Z16F3211FI20EG Z16F3211FI20SG Z16F2811AL20AG Z16F2811AL20SG Z16F2811FI20AG Z16F2811AL20EG Z16F2811FI20SG Z16F2811FI20EG
OCR Text ...flash m c u h igh-p e r fo rma nce 16- b i t flash so lu t i on p b019206-0907 ? register-to-register-based architecture ? 20 mips throughput at 20 mhz ? 8-, 16-, and 32-bit alu operations ? 16-bit internal and external bus widt...
Description ZNEO? Z16F Series Flash Microcontroller A 16-bit Single-Cycle CISC MCU Solution

File Size 269.93K  /  8 Page

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    SGS-THOMSON
Part No. 2N2222A
OCR Text ...t h j - am b th er ma l resista nce junction-case th er ma l resista nce ju nction -ambien t ma x ma x 50 c/ w 187.5 c/ w 83.3 c/ w 300 c/ w 2n 22 18a - 2n 22 19a - 2n 22 21a - 2n 22 22a 2/8 e l e c tri c a l char acte r i s t i c s (...
Description HIGH SPEED SWITCHES

File Size 190.48K  /  8 Page

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