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SANYO[Sanyo Semicon Device]
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| Part No. |
CPH6702 1160
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| OCR Text |
...tor Dissipation, PC - W
M ou nte d
Forward Current, IF - A
1.4 1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20
3 2 1.0 7 5
on a
.8m
Ambient Temperature, Ta - C
40
60
80
100
120
140
160
0.01
0
0.2
75
... |
| Description |
TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications
From old datasheet system
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| File Size |
49.23K /
4 Page |
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it Online |
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Macronix 旺宏
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| Part No. |
MX26C1000A 26C1000A
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| OCR Text |
... are TTL levels, requiring a
nte ATE P
DT
single pulse. The MX26C1000A supports an intelligent quick pulse programming algorithm which can result in a programming time of less than 30 seconds. This MTP EPROMTM is packaged in indust... |
| Description |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM
From old datasheet system
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| File Size |
109.02K /
16 Page |
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it Online |
Download Datasheet |
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Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
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| Part No. |
MCH6103 MCH6203
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| OCR Text |
...s 0
1.2
1.0
M
ou
nte
0.8
do
na
ce
ram
0.6
ic
bo
ard
(6
0.4
00
Ta=25C Single pulse For PNP, minus sign is omitted.
Mounted on a ceramic
2 3 5 7 1.0 2 3
mm
2
x0
0.2
.8m
... |
| Description |
PNP/NPN Epitaxial Planar Silicon Transistors
DC/DC Converter Applications
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| File Size |
47.95K /
5 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
nte5408 nte5410
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| OCR Text |
nte5408 thru nte5410 Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate
Description: The nte5408 through nte5410 sensitive gate SCRs are designed to be driven directly with IC and MOS devices. These SCRs feature proprietary, void-free... |
| Description |
Silicon Controlled Rectifier (SCR) 3 Amp Sensitive Gate
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| File Size |
20.50K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
nte5811 nte5891 nte5810 nte5870 nte5890 nte5874 nte5880
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| OCR Text |
nte5810 & nte5811, nte5870 thru nte5891 Silicon Power Rectifier Diode, 12 Amp
Description: The nte5810, nte5811, and nte5870 through nte5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers... |
| Description |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
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| File Size |
23.18K /
2 Page |
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it Online |
Download Datasheet |
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