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  puls Datasheet PDF File

For puls Found Datasheets File :: 3032    Search Time::1.437ms    
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    BAS70-04T BAS70-05 BAS70-04 BAS70-02L BAS70-05W BAS70-06 BAS70-04S BAS70-07W BAS170W BAS70-02W BAS70-04W BAS70-06W BAS70

INFINEON[Infineon Technologies AG]
Part No. BAS70-04T BAS70-05 BAS70-04 BAS70-02L BAS70-05W BAS70-06 BAS70-04S BAS70-07W BAS170W BAS70-02W BAS70-04W BAS70-06W BAS70-07
OCR Text ... BAS70 Permissible puls Load RthJS = (tp ) Permissible pulse Load IFmax / IFDC = (tp ) -5 10 -4 (TS ) Forward current IF = (TS ) 75 90 105 120 C 150 TS D=0 0.005 0.01 0.02 0.05 0.1...
Description SENSOR VACUUM GAGE .3PSI
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 400 A rms nominal, ±900 A range
CSCA-A Series Hall-effect based, open-loop current sensor, Molex-type connector, 200 A rms nominal, ±600 A range
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 100 A rms nominal, ±300 A range
Silicon Schottky Diode
Latest Silicon Discretes - Schottky Diode for switching applications

File Size 553.12K  /  12 Page

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    BSM300GA170DLC

eupec GmbH
Part No. BSM300GA170DLC
OCR Text ...- s einschaltverlustenergie pro puls i c = 300a, v ce = 900v, v ge = 15v turn-on energy loss per pulse r g = 5 w , t vj = 125c, l s = 60nh e on - 130 - mws abschaltverlustenergie pro puls i c = 300a, v ce = 900v, v ge = 15v turn-of...
Description IGBT-Modules

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    DBFZ800R12KL4CV

Infineon Technologies AG
Part No. DBFZ800R12KL4CV
OCR Text ...- s einschaltverlustenergie pro puls i c = 800a, v ce = 600v, v ge = 15v turn-on energy loss per pulse r g = 1,8 w , t vj = 125c, l s = 70nh e on - 121 - mws abschaltverlustenergie pro puls i c = 800a, v ce = 600v, v ge = 15v turn-...
Description IGBT Module IGBT模块

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    BCR148U

Infineon Technologies AG
Part No. BCR148U
OCR Text ...02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) bcr148f 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 2006-05-04 8 bcr148... permissible ...
Description 70 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR SC-74, 6 PIN

File Size 320.53K  /  19 Page

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    PIP8.4H2 PHP8.4 PHP8.4H1 PIP208H2 PIP8.4H1 PIP24H1 PIP208H1 PHP500H1 PHP500H3

Microsemi, Corp.
ProTek Devices
MICROSEMI CORP-SCOTTSDALE
Part No. PIP8.4H2 PHP8.4 PHP8.4H1 PIP208H2 PIP8.4H1 PIP24H1 PIP208H1 PHP500H1 PHP500H3
OCR Text ... 3 ) ? 15,00 0 w a tts peak puls e po wer dissi patio n a t 10/10 00 s p u l s e and 2 5 o c fo r php or pip60, 120, 208, 25 0, 440 and 5 00 ? operatin g an d storage temp e r atures: -65 o c to + 150 o c ? averag e stead y st...
Description 7500 W, BIDIRECTIONAL, SILICON, TVS DIODE PLASTIC, CASE-11, 2 PIN
7500 W, BIDIRECTIONAL, SILICON, TVS DIODE HERMETIC SEALED, METAL, CASE-11, 2 PIN
15000 W, BIDIRECTIONAL, SILICON, TVS DIODE PLASTIC, CASE-11, 2 PIN

File Size 167.93K  /  3 Page

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    EUPEC GMBH ?CO KG
Part No. FP50R12KE3 FP75R12KE3
OCR Text ... ns einschaltverlustenergie pro puls i c = i nenn , v cc = 600 v turn-on energy loss per pulse v ge = 15v, t vj = 125c, r g = 5 ohm e on - 9,4 - mws l s = 45 nh ...
Description Elektrische Eigenschaften / Electrical properties 75 A, 1200 V, N-CHANNEL IGBT
Elektrische Eigenschaften / Electrical properties 105 A, 1200 V, N-CHANNEL IGBT

File Size 152.11K  /  11 Page

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    Ironwood Electronics
Part No. V23990-P81-A20-PM
OCR Text ...mws einschaltverlustenergie pro puls tj=125c rgon=64 ohm 0,102 turn-off energy loss per pulse e off tj=25c 15 300 5 mws abschaltverlustenergie pro puls tj=125c rgoff=32ohm 0,102 input capacitance c ies tj=25c f=1mhz 0 25 0,264 nf eingangska...
Description 7.8 A, 600 V, N-CHANNEL IGBT

File Size 358.97K  /  18 Page

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    eupec
Part No. FD300R12KE3
OCR Text .../dt einschaltverlustenergie pro puls turn on energy loss per pulse ausschaltverlustenergie pro puls v ge = 15v, r g = 2,4 ? , t vj = 125c kurzschlussverhalten t p 10s, v ge 15v, t vj 125c turn off energy loss per pulse sc data ...
Description IGBT Module

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For puls Found Datasheets File :: 3032    Search Time::1.437ms    
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