| |
|
 |
NXP Semiconductors N.V.
|
| Part No. |
PSMN7R6-60BS
|
| OCR Text |
to 175 c. this product is designed and qualified for use in a wid e range of industrial, communications and domestic equipment. 1.2 featur...92a p tot total power dissipation t mb =25c; see figure 2 - - 149 w t j junction temperature -55 - ... |
| Description |
N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK
|
| File Size |
195.17K /
14 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SL
|
| Part No. |
CINT1275
|
| OCR Text |
...perior performance 275 watts ac to dc power sup ply designed for industrial and ite applications. f eature rich and highly efficient cint12...92a 7.5 a 3% 240 28.0 2.5v cint1275a4814k01 48 v 5.46a 3.75 a 3% ... |
| Description |
Single Output 275 Watts Industrial & ITE Power Supply
|
| File Size |
2,264.59K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Cinch Connectors
|
| Part No. |
97-3250-90
|
| OCR Text |
...sition size plug also available to lock with industry-standard bail latches. designed for panel mount, 180 (top-entry), or 90 (standard) /...92a 24 97-22240-92 97-22240-92a .125 hole 36 97-22360-92 97-22360-92a 50 97-22500-92 97-22500-92a 64... |
| Description |
; No. of Contacts:50; Contact Termination:IDC; Gender:Male; Contact Plating:Gold RoHS Compliant: Yes 50 CONTACT(S), MALE, TELECOM AND DATACOM CONNECTOR, IDC, PLUG
|
| File Size |
102.55K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
SL
|
| Part No. |
MINT1275
|
| OCR Text |
...perior performance 275 watts ac to dc power sup ply designed for medical applications. feature rich and highly efficient mint1275 product ...92a 7.5 a 3% 240 28.0 2.5v mint1275a4814k01 48 v 5.46a 3.75 a 3% ... |
| Description |
Single Output 275 Watts Medical Power Supply
|
| File Size |
2,274.03K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
International Rectifier
|
| Part No. |
IRF7311TR IRF7311TRPBF
|
| OCR Text |
to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design...92a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 12mh r g = 25 ... |
| Description |
Generation V Technology
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
| File Size |
212.20K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
NXP Semiconductors N.V.
|
| Part No. |
PSMN4R1-30YLC
|
| OCR Text |
...y power so8 package, qualified to 175c ? low parasitic inductance and resistance ? optimised for 4.5v gate drive utilising nextpower supe...92a p tot total power dissipation t mb = 25 c; see figure 2 --67w t j junction temperature -55 - 1... |
| Description |
N-channel 30 V 4.35m logic level MOSFET in LFPAK using NextPower technology 90 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
| File Size |
305.41K /
15 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
