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  vce Datasheet PDF File

For vce Found Datasheets File :: 41415    Search Time::3.14ms    
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    2SB1050

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1050
OCR Text ...ymbol ICBO IEBO vceO VEBO hFE*1 vce(sat) fT Cob Conditions VCB = -10V, IE = 0 VEB = -5V, IC = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 vce = -2V, IC = -2A*2 IC = -3A, IB = -0.1A*2 VCB = -6V, IE = 50mA, f = 200MHz VCB = -20V, IE = 0, f = 1MHz ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 36.25K  /  2 Page

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    2SB1059 2SB1059C

HITACHI[Hitachi Semiconductor]
Rohm Co., Ltd.
Part No. 2SB1059 2SB1059C
OCR Text ...55 V, IE = 0 VEB = -6 V, IC = 0 vce = -2 V, IC = -0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter satu...
Description SMALL SIGNAL TRANSISTOR, TO-92
Silicon PNP Epitaxial
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92 晶体管|晶体管|进步党| 50V五(巴西)总裁| 1A条一(c)|2

File Size 16.80K  /  4 Page

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    2SB1071 2SB1071A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1071 2SB1071A
OCR Text ...ctor-emitter saturation voltage vce(sat) * High-speed switching * Full-pack package which can be installed to the heat sink with one screw 16.70.3 7.50.2 3.10.1 Absolute Maximum Ratings TC = 25C Parameter Collector-base voltage...
Description Silicon PNP epitaxial planar type

File Size 83.97K  /  4 Page

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    2SB1072 2SB1072L 2SB1072S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SB1072 2SB1072L 2SB1072S
OCR Text ... mA, IC = 0 VCB = -80 V, IE = 0 vce = -60 V, RBE = vce = -3 V, IC = -2 A*1 I C = -2 A, IB = -4 mA*1 I C = -4 A, IB = -40 mA*1 I C = -2 A, IB = -4 mA*1 I C = -4 A, IB = -40 mA*1 I D = 4 A*1 I C = -2 A, IB1 = -IB2 = -4 mA Collector to emitte...
Description Silicon PNP Triple Diffused 三重扩散硅进步党

File Size 34.72K  /  6 Page

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    2SB1073

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1073
OCR Text ...r to emitter saturation voltage vce(sat). Large peak collector current ICP. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.60.1 0.4max. 45 ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 34.72K  /  2 Page

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    2SB1079

HITACHI[Hitachi Semiconductor]
Part No. 2SB1079
OCR Text ...mA, IC = 0 VCB = -100 V, IE = 0 vce = -80 V, RBE = vce = -3 V, IC = -10 A*1 I C = -10 A, IB = -20 mA*1 Collector to emitter breakdown V(BRCEO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutof...
Description Silicon PNP Triple Diffused

File Size 35.32K  /  6 Page

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    2SB1091

HITACHI[Hitachi Semiconductor]
Part No. 2SB1091
OCR Text ... mA, IC = 0 VCB = -60 V, IE = 0 vce = -50 V, RBE = vce = -3 V, IC = -4 A*1 I C = -4 A, IB = -8 mA*1 I C = -8 A, IB = -80 mA*1 I C = -4 A, IB = -8 mA*1 I C = -8 A, IB = -80 mA*1 I C = -4 A, IB1 = -IB2 = -8 mA Collector to emitter breakdown ...
Description Silicon PNP Triple Diffused

File Size 34.50K  /  6 Page

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    2SB1103

HITACHI[Hitachi Semiconductor]
Part No. 2SB1103
OCR Text ... mA, IC = 0 VCB = -60 V, IE = 0 vce = -50 V, RBE = vce = -3 V, IC = -4 A*1 I C = -4 A, IB = -8 mA*1 I C = -8 A, IB = -80 mA*1 I C = -4 A, IB = -8 mA*1 I C = -8 A, IB = -80 mA*1 I D = 8 A*1 I C = -4 A, I B1 = -IB2 = -8 mA Collector to emitt...
Description Silicon PNP Darlington Transistor
Silicon PNP Triple Diffused

File Size 35.86K  /  7 Page

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    2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132R

Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132R
OCR Text vce(sat). vce(sat) = *0.2V (Typ.) (IC / IB = -500mA / -50mA) 2) Compliments 2SD1664 / 2SD1858. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm) (96-120-B12) 207 Transistors FAbsolute maximum...
Description Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)

File Size 121.30K  /  4 Page

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    2SB1133

WINGS[Wing Shing Computer Components]
Part No. 2SB1133
OCR Text ...h Product Symbol ICBO IEBO hFE1 vce(sat) fT Test Condition VCB= -150V , IE=0 VEB= -5V , IC=0 vce= -2.0V ,IC=-1.0A IC=-3A ,IB=-0.3mA vce= -10V ,IC=-0.5A Min Typ Max -10 -10 240 -1.4 60 Unit A A 70 V MHZ Wing Shing Computer Componen...
Description PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)

File Size 68.87K  /  1 Page

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For vce Found Datasheets File :: 41415    Search Time::3.14ms    
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