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vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 273 Search Time::1.156ms
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				Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75E3Y-H QM75E2Y-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A -IC=75A (diode forward voltage) IC=75A, VCE...
Description	HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型 MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	88.87K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	QM30E3Y-2H QM30E2Y-2H QM30E2Y
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ....
Description	MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
File Size	89.16K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM50E3Y-H QM50E2Y-H QM50E2Y
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, ...
Description	MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	88.52K / 6 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	QM75E2Y-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A -IC=75A (diode forward voltage) IC=75A, VCE...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	75.77K / 6 Page	View it Online	Download Datasheet

				Inchange Semiconductor ... Inchange Semiconductor Company Limited
Part No.	BUV48B
OCR Text	...tor-Emitter Sustaining Voltage: VCEO(SUS)= 600V (Min) High Current Capability Fast Switching Speed APPLICATIONS *Designed for switching and industrial applications from single and three-phase mains. Absolute maximum ratings(Ta=25) ...
Description	isc Silicon NPN Power Transistor
File Size	76.34K / 2 Page	View it Online	Download Datasheet

				KEC Holdings KEC(Korea Electronics)
Part No.	KTA1807D KTA1807L
OCR Text	VCEO=-600V. High Speed Switching Time. : tf 1.0 s (IC=-0.5A) Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) Wide Safe Operating Area (SOA). Q A C KTA1807D/L TRIPLE DIFFUSED PNP TRANSISTOR I J H ...
Description	TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)
File Size	401.87K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE99
OCR Text	...ngs: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....600V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
File Size	26.83K / 3 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SA1413-Z
OCR Text	...-0.1 Features High Voltage: VCEO=-600V High speed:tr 1.0is +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 ...
Description	PNP Silicon Transistor
File Size	37.63K / 2 Page	View it Online	Download Datasheet

				Continental Device India Limited CDIL
Part No.	CFD13003
OCR Text	...13003Rev 300905D SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD PD Tj, Tstg VALUE 600 400 9.0 2.5 4.0 0.75 1.5 2.25 4.5 1.4 11.2 45 360...600V, IE=0 VCB=600V, IE=0, Tc=100C VEB=9V, IC=0 Continental Device India Limited Data Sheet ...
Description	NPN SILICON POWER TRANSISTOR
File Size	151.03K / 3 Page	View it Online	Download Datasheet

				CDIL[Continental Device India Limited] Continental Device India, Ltd.
Part No.	CDT13003 CDT13003B CDT13003F CDT13003E CDT13003A CDT13003C CONTINENTALDEVICEINDIALIMITED-CDT13003F
OCR Text	...003Rev_1 230306D SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD PD Tj, Tstg VALUE 600 400 9.0 1.8 3.5 0.75 1.5 2.25 4.5 1.4 11.2 50 480...600V, IE=0 VCB=600V, IE=0, Tc=100C VEB=9V, IC=0 MIN 600 400 - TYP - MAX 1.0 5.0 1.0 UNIT...
Description	NPN SILICON POWER TRANSISTOR NPN硅功率晶体管
File Size	167.39K / 4 Page	View it Online	Download Datasheet

For vceo-600v Found Datasheets File :: 273 Search Time::1.156ms
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