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10V8X1 3ATPYB AHCT1 MAXIM ATF15 07000 002000 10V8X1
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  vdd in Datasheet PDF File

For vdd in Found Datasheets File :: 87749    Search Time::2.203ms    
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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...6 nC VDS = 44V 93 VGS = 10V --- vdd = 38V --- ID = 110A ns --- RG = 1.1 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package -...in THIS AREA LIMITED BY RDS(on) TJ = 175 C 1000 10us 100us 1ms 10 10ms 100 TJ = 25 C 10 ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...6 nC VDS = 44V 93 VGS = 10V --- vdd = 38V --- ID = 110A ns --- RG = 1.1 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package -...in THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) TJ = 175 C 100 I D , Dr...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ... ID = 78A VDS = 60V VGS = 10VTX vdd = 38V ID = 78A RG = 2.5 VGS = 10V TX D Between lead, 6mm (0.25in.) G from package and center of die cont...in THIS AREA LIMITED BY R DS (on) 100.00 TJ = 175C 10.00 T J = 25C 1.00 VGS = 0V 0.10 0.0 1...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...V ID = 78A VDS = 60V VGS = 10VT vdd = 38V ID = 78A RG = 2.5 VGS = 10V T D Between lead, 6mm (0.25in.) G from package and center of die conta...in THIS AREA LIMITED BY R DS (on) 100.00 TJ = 175C 10.00 T J = 25C 1.00 VGS = 0V 0.10 0.0 1...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

File Size 126.10K  /  9 Page

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ... Pulse Width 300ms, d 2% 2) @ vdd = 25V , L 0.8mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 170A/ms , vdd BVDSS , TJ 150C , SUGGESTED RG = 9.1W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 ...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ... Pulse Width 300ms, d 2% 2) @ vdd = 25V , L 0.3mH , RG = 25W , Peak IL = 27A , Starting TJ = 25C 3) @ ISD 27A , di/dt 70A/ms , vdd BVDSS , TJ 150C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 ...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...S = 60V 73 110 VGS = 10V 22 --- vdd = 38V 130 --- ID = 85A ns 84 --- RG = 1.8 86 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G f...in THIS AREA LIMITED BY R DS (on) 100 10 ID , Drain-to-Source Current (A) 1000 100 ...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...S = 10V, See Fig. 6 and 13 --- vdd = 20V --- ID = 100A ns --- RG = 2.5 --- VGS = 10V,See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G fr...in THIS AREA LIMITED BY R DS(on) 100 I D , Drain Current (A) TJ = 200 C 1000 10u...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...nC VDS = 10V --- VGS = 4.5V --- vdd = 10V --- ID = 1.0A ns --- RG = 53 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 15V --- = 1.0MHz Source...in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF1902 100 VGS 7...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...2 nC VDS = 32V 59 VGS = 10V --- vdd = 20V --- ID = 130A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package -...in THIS AREA LIMITED BY R DS(on) TJ = 175 C 100 ID, Drain-to-Source Current (A) 1000 I...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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For vdd in Found Datasheets File :: 87749    Search Time::2.203ms    
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