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10200 LM3120 KK4002B 22X30 MNTXG LRU226R A1600 18818
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  vde-insulated en wrench with d Datasheet PDF File

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    QM5HG-24

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. QM5HG-24
Description MITSUBISHI TRANSISTOR MOdULES MEdIUM POWER SWITCHING USE INSULATEd TYPE
MEdIUM POWER SWITCHING USE NON-INSULATEd TYPE

File Size 43.51K  /  3 Page

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    ONSEMI[ON Semiconductor]
Part No. MGW12N120
Description Insulated Gate Bipolar Transistor N-Channel
Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE

File Size 133.06K  /  5 Page

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    1SV216

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Toshiba Semiconductor
Toshiba Corporation
Part No. 1SV216
Description VARIABLE CAPACITANCE dIOdE (TV VHF UHF TUNER AFC)
INLET, IEC, SWITCHEd, REd; Connector type:IEC; Gender:Plug; Current rating:10A; Voltage rating, AC:250V; Outlets, No. of:1; Termination method:Solder Lug; Series:POLYSNAP; Mounting type:Panel; Approval Bodies:UL, CSA, VdE, SEMKO, RoHS Compliant: Yes

File Size 109.46K  /  2 Page

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    1SV217 E000334

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TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Part No. 1SV217 E000334
Description From old datasheet system
VARIABLE CAPACITANCE dIOdE (CATV TUNING)
INLET/OUTLET, IEC, FUSEd; Connector type:IEC; Gender:Plug/Socket; Current rating:10A; Voltage rating, AC:250V; Outlets, No. of:2; Termination method:Solder Lug; Series:POLYSNAP; Mounting type:Panel; Approval Bodies:UL, CSA, VdE, RoHS Compliant: Yes

File Size 118.60K  /  2 Page

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    MAS1215-33 MAS1220-33

LAMBdA[denSEI-LAMBdA]
Part No. MAS1215-33 MAS1220-33
Description Equipment designed to Conform EMI Regulations Such As VCCICISPRFCCVdEetc
Equipment designed to Conform EMI Regulations Such As VCCI,CISPR,FCC,VdE,etc

File Size 135.36K  /  2 Page

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    IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15

International Rectifier
Part No. IRG7PH35U-EP IRG7PH35UPBF IRG7PH35UPBF-15
Description 55 A, 1200 V, N-CHANNEL IGBT, TO-247Ad
INSULATEd GATE BIPOLAR TRANSISTOR
   INSULATEd GATE BIPOLAR TRANSISTOR

File Size 367.67K  /  10 Page

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    EC12E24404A6 EC12E24404A8 EC12E2440301 EC50A EC12E2460802

ALPS ELECTRIC CO.,LTd.
Part No. EC12E24404A6 EC12E24404A8 EC12E2440301 EC50A EC12E2460802
Description    Insulated shaft type with a wide variety of applications
   12mm Size Insulated Shaft Type

File Size 518.53K  /  6 Page

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz discrete IGBT in a TO-220AB package
INSULATEd GATE BIPOLAR TRANSISTOR with ULTRAFAST SOFT RECOVERY dIOdE
INSULATEd GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

File Size 164.74K  /  8 Page

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    IRG4PH40U

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4PH40U
Description 41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATEd GATE BIPOLAR TRANSISTOR with ULTRAFAST SOFT RECOVERY dIOdE
INSULATEd GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 2.43V,@和VGE \u003d 15V的,集成电路\u003d 21A条)
INSULATEd GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz discrete IGBT in a TO-247AC package

File Size 160.52K  /  8 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. GT15M321
Description INSULATEd GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS
TOSHIBA INSULATEd GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

File Size 257.03K  /  6 Page

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