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Infineon Technologies AG
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Part No. |
IPB25N06S3-2507 IPI25N06S3-25
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OCR Text |
...rrent, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse ...6V
40 45
7V
7V
R DS(on) [m]
30
I D [A]
35
8V
20
6V
25
10 V
10
5V
... |
Description |
OptiMOS-T2 Power-Transistor 25 A, 55 V, 0.0251 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA GREEN, PLASTIC, TO-262, 3 PIN
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File Size |
185.07K /
9 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
S1T2410B01 S1T2410B02 DS_S1T2410B01 S1T2410B02-D0B0 S1T2410B01-D0B0 DSS1T2410B02 DSS1T2410B01
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OCR Text |
...ge2 Sustaining Current2 Trigger Voltage3 Trigger Current3 Disable Voltage4 Disable Current4 Output Voltage High Output Voltage Low Input Cur...6V, Pin 7 = GND VCC = 21V, I8 = 15mA Pin 6 = GND, Pin 7 = 6V Pin 3 = 6V, Pin 4 = GND Pin 7 = 6V, Pin... |
Description |
From old datasheet system bipolar integrated circuit designed as a telephone bell replacement Low drain current,Adjustable 2-frequency tone,Built-in hysteresis bipolar integrated circuit designed as telephone bell replacement
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File Size |
168.67K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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