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For w charge Found Datasheets File :: 78541 Search Time::1.875ms
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				IRF[International Rectifier]
Part No.	IRF7807VD2 IRF7807VD2TR
OCR Text	...66 2.5 1.6 3.7 2.3 -55 to 150 C w A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View ...charge* Pre-Vth Gate-Source charge Post-Vth Gate-Source charge Gate to Drain charge Switch Chg(Qgs2 ...
Description	30V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	113.54K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807V
OCR Text	... 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7807V RDS(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Absolute Maximum Ratings Pa...charge* Pre-Vth Gate-Source charge Post-Vth Gate-Source charge Gate to Drain charge Switch Chg(Qgs2 ...
Description	N Channel Application Specific MOSFET
File Size	126.34K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	... 4 5 SO-8 T o p V ie w Device Features IRF7807 IRF7807A Vds 30V 30V Rds(on) 25m 25m Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC ...charge* Pre-Vth Gate-Source charge Post-Vth Gate-Source charge Gate to Drain charge Switch charge* (...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POwER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	... 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC 6.7nC 8.1nC Absolute Maximum Ratings P...charge Post-Vth Gate-Source charge Gate to Drain charge Switch Chg(Qgs2 + Qgd) Output charge Gate Re...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-Channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	... 4 5 SO-8 T o p V ie w DEVICE RATINGS IRF7809A VDS RDS(on) QG Qsw Qoss 30V 8.5 m 73 nC 22.5 nC 30 nC IRF7811A 28V 12 m 23 nC 7...charge Post-Vth Gate-Source charge Gate to Drain charge Switch Chg(Qgs2 + Qgd)* Output charge* Gate ...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	... (1.6mm from case ) Units A w w/C V V/ns C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge through ...charge Gate-to-Source charge Gate-to-Drain ("Miller") charge Turn-On Delay Time Rise Time Turn-Off D...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V V/ns C Typical SMPS Topologies: l l l Two Transistor Forward Haft Bridge Full Bridge 1 7/7/9...charge Gate-to-Source charge Gate-to-Drain ("Miller") charge Turn-On Delay Time Rise Time Turn-Off D...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	... Units V A A A V mJ A mJ V/ns w w/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energ...charge Gate-Source charge Gate-Drain charge VDS = 400 V, ID = 8.0 A, VGS = 10 V (Note 4, 5) VDD ...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...0 (1.6mm from case) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB...charge --- Q gs Gate-to-Source charge --- Qgd Gate-to-Drain ("Miller") charge --- td(on) Turn-On Del...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	...9 (0 .4 0 9 ) 2 -100V -8A w 0.35w 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 ...charge Gate - Source charge Gate - Drain ("Miller") charge Turn-On Delay Time Rise Time Turn-Off Del...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POwER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

For w charge Found Datasheets File :: 78541 Search Time::1.875ms
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