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				NXP Semiconductors
Part No.	BLF6G22-180PN
OCR Text	...e 1.1 General description 180 w LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. T...th) VGSq IDSS gate-source threshold voltage gate-source quiescent voltage drain leakage current Cond...
Description	Power LDMOS transistor
File Size	76.97K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLL1214-250R
OCR Text	...1.4 VDS (V) 36 IDq (mA) 150 PL (w) Gp (dB) D (%) 47 Pdroop(pulse) (dB) 0.2 tr (ns) 15 tf (ns) 5 250 13 CAUTION this device is sensitiv...th 70 C; tp = 1 ms; = 10 % Conditions Min -22 -65 Max 75 +22 400 +150 200 Unit V V A C C 5. the...
Description	L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POwER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)\|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
File Size	122.69K / 12 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...th) Gate threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(o...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-So...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ A mJ V/ns C thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PC...th) Gate threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(o...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSC031N06NS3G
OCR Text	... GS=10 V, T C=25 C, R thJA =50K/w 3) Pulsed drain current4) Avalanche energy, single pulse5) Gate source voltage 1) 2) 3) Value 100 100 ...th) I DSS V DS=V GS, I D=93 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-sour...
Description	Power Transistor OptiMOS3 Power-Transistor
File Size	321.42K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSC600N25NS3G
OCR Text	...25 C I D=25 A, R GS=25 mJ V w C T C=25 C 125 -55 ... 150 55/150/56 J-STD20 and JESD22 See figure 3 Rev. 2.3 page 1 200...th) I DSS V DS=V GS, I D=90 A V DS=200 V, V GS=0 V, T j=25 C V DS=200 V, V GS=0 V, T j=125 C Gate-so...
Description	OptiMOS3 Power-Transistor
File Size	302.30K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSP13510 BSP135L6906 BSP135L6327
OCR Text	...=25 C 1.8 -55 ... 150 55/150/56 w C see table on next page and diagram 11 Rev. 1.31 page 1 2010-07-19 BSP135 Parameter Symb...th) I D(off) V DS=3 V, I D=94 A V DS=600 V, V GS=-3 V, T j=25 C V DS=600 V, V GS=-3 V, T j=125 C Gat...
Description	SIPMOS Small-Signal-Transistor 0.12 A, 600 V, 45 ohm, N-CHANNEL, Si, POwER, MOSFET
File Size	296.55K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	... (1.6mm from case ) Units A w w w/C V mJ mJ V/ns C thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB ...th) Gate threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(o...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

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