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For x4-bank Found Datasheets File :: 1365 Search Time::1.89ms
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Part No.	K4S280432I-TL750
OCR Text	...le -bit write operation ? dqm (x4,x8) & l(u)dqm (x16) for masking ? auto & self refresh ? 64ms refresh period (4k cycle) ? rohs compliant...bank select data input register 8m x 4 / 4m x 8 / 2m x 16 8m x 4 / 4m x 8 / 2m x 16 sense amp output...
Description	32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
File Size	338.13K / 17 Page	View it Online	Download Datasheet


Part No.	MT41K256M4JP-125G
OCR Text	...4m16 ? fbga package (pb-free) C x4, x8 C 78-ball fbga (8mm x 11.5mm) rev. f, g jp ? fbga package (pb-free) C x16 C 96-ball fbga (8mm x 1...bank address 8 ba[2:0] 8 ba[2:0] 8 ba[2:0] column address 2k a[11, 9:0] 1k a[9:0] 1k a[9:0] page siz...
Description	256M X 4 DDR DRAM, PBGA78
File Size	446.14K / 21 Page	View it Online	Download Datasheet


Part No.	K4T51163QE-ZPD50
OCR Text	...1gb 2gb 4gb configuration 128mb x4 64mb x 8 32mb x16 # of banks 4 4 4 bank address ba0,ba1 ba0,ba1 ba0,ba1 auto precharge a 10 /ap a 10 /ap a 10 /ap row address a 0 ~ a 13 a 0 ~ a 13 a 0 ~ a 12 column address a 0 ~ a 9, a 11 a 0 ~ a 9...
Description	32M X 16 DDR DRAM, 0.5 ns, PBGA84
File Size	449.51K / 25 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
OCR Text	x4, x8) DDR SDRAM 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO ...Bank Select x8/16 8Mx8/ 4Mx16 Output Buffer 2-bit prefetch Sense AMP Refresh Counter Row Buffer ...
Description	DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	245.98K / 24 Page	View it Online	Download Datasheet


Part No.	UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45256441G5-A80L-9JF UPD45256841G5-A10B-9JF
OCR Text	...auto) refresh and self refresh x4, x8, x16 organization single 3.3 v 0.3 v power supply lvttl compatible inputs and outputs 8,192 ref...bank) mhz (max.) m pd45256441g5-a80-9jf 16m x 4 x 4 125 54-pin plastic tsop(ii) m pd45256441g5-a10-9...
Description	16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
File Size	650.31K / 84 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5DU281622T
OCR Text	...hy5du28822t hy5du281622t 128mb (x4, x8, x16) double data rate sdram contents 1. 128m ddr sdram brief information --------------------------...bank operations with single pulsed ras ? auto refresh and self refresh supported ? 4096 refresh cyc...
Description	2nd 128M DDR SDRAM
File Size	1,585.81K / 57 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S280832F-UL75 K4S281632F-UL75 K4S280432F-UC75 K4S280432F-UL75 K4S281632F-UC60 K4S281632F-UC60_75 K4S281632F-UL60 K4S281632F-UL60_75 K4S281632F-UC60/75 K4S281632F-UL60/75 K4S280432F-UC750 K4S281632F-UL750
OCR Text	x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.2 August 2004 * S...Bank Select 8M x 4 / 4M x 8 / 2M x 16 Sense AMP 8M x 4 / 4M x 8 / 2M x 16 8M x 4 / 4M x 8 / 2M x 16 ...
Description	8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
File Size	142.90K / 14 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M383L3223ETS M383L6420ETS M383L2828ET1 M383L6423ETS M312L6420ETS M312L6423ETS M312L2828ET0 M312L3223ETS
OCR Text	x4, x8) with 1,700 / 1,200mil Height & 72-bit ECC Revision 1.4 January, 2004 Revision 1.4 February, 2004 256MB, 512MB, 1GB Register...Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip s...
Description	DDR SDRAM Registered Module
File Size	446.08K / 23 Page	View it Online	Download Datasheet

				PROMOS TECHNOLOGIES INC
Part No.	V54C3128164VCLK75HPC V54C3128804VCLK75EPC V54C3128164VCLK75IPC V54C3128164VCLK75PC V54C3128404VCLK75 V54C3128404VCLK75PC
OCR Text	...0/40)4vc 54 pin plastic tsop-ii x4 pin configuration top view pin names v cc nc v ccq nc i/o 0 v ssq nc nc v ccq nc i/o 1 v ssq nc v cc nc w...bank select i/o 0 ?i/o 3 data input/output dqm data mask v cc power (+3.3v) v ss ground v ccq power ...
Description	8M X 16 SYNCHRONOUS DRAM, PBGA54 16M X 8 SYNCHRONOUS DRAM, PBGA54 32M X 4 SYNCHRONOUS DRAM, PBGA54
File Size	646.13K / 56 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632E-UC75 K4S561632E-UL75 K4S561632E-UL60 K4S561632E-UC60 K4S560832E-UC75 K4S560832E-UL75 K4S560432E-UC K4S560432E-UC75 K4S560432E-UL75
OCR Text	x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.3 August 2004 * Sam...Bank Select 16M x 4 / 8M x 8 / 4M x 16 Sense AMP 16M x 4 / 8M x 8 / 4M x 16 16M x 4 / 8M x 8 / 4M x ...
Description	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 256Mb的电子芯片与内存规格4 TSOP-II免费（符合RoHS
File Size	196.27K / 14 Page	View it Online	Download Datasheet

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