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  -14a Datasheet PDF File

For -14a Found Datasheets File :: 2934    Search Time::2.485ms    
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    Fairchild Semiconductor, Corp.
Part No. IRFP244A
OCR Text ...arting t j =25 c (3) i sd 14a, di/dt 250a/ m s, v dd bv dss , starting t j =25 c (4) pulse test: pulse width = 250 m s, duty cycle 2% (5) essentially independent of operating temperature 1&+$11(/ 32:(5 026)(7 electrica...
Description N-Channel Power MOSFET(N沟道增强型功率MOS场效应管(漏源电压为250V,导通电阻为0.28Ω,漏电流6A N沟道功率MOSFET(不适用沟道增强型功率马鞍山场效应管(漏源电压为250V,导通电阻为0.28Ω,漏电流6A条)

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    IRF7458 IRF7458TR

IRF[International Rectifier]
Part No. IRF7458 IRF7458TR
OCR Text ...30V RDS(on) max 8.0m ID 14A Ultra-Low Gate Impedance Very Low RDS(on) Fully Characterized Avalanche Voltage and Current S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ra...
Description 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)

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    IRF7463

IRF[International Rectifier]
Part No. IRF7463
OCR Text ...0V RDS(on) max 0.008 ID 14A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current l SO-8 Absolute Maximum Ratings Paramet...
Description Power MOSFET(Vdss=30V/ Rds(on)max=0.008ohm/ Id=14A)
Power MOSFET(Vdss=30V, Rds(on)max=0.008ohm, Id=14A)

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    IRF7465

IRF[International Rectifier]
Part No. IRF7465
OCR Text ... = 1mA 0.28 VGS = 10V, ID = 1.14A 5.5 V VDS = VGS, ID = 250A 25 VDS = 150V, VGS = 0V A 250 VDS = 120V, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(o...
Description Power MOSFET(Vdss=150V/ Id=1.9A)
Power MOSFET(Vdss=150V, Id=1.9A)

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    IRF7484

IRF[International Rectifier]
Part No. IRF7484
OCR Text ... (mW) 40V 10@VGS = 7.0V ID 14A Benefits l l l l S S 1 8 A A D D D D 2 7 Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest p...
Description HEXFET Power MOSFET

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    TSM15N50CI TSM15N50CZ

Taiwan Semiconductor Company, Ltd
Part No. TSM15N50CI TSM15N50CZ
OCR Text ... diode forward voltage i s = 14a, v gs = 0v v sd -- -- 1.5 v dynamic b total gate charge v ds = 400v, i d = 14a, v gs = 10v q g -- 39 -- nc gate-source charge q gs -- 11 -- gate-drain charge q gd -- 8...
Description 500V N-Channel Power MOSFET

File Size 394.76K  /  10 Page

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    FDD6680

Fairchild Semiconductor
Part No. FDD6680
OCR Text ...-resistance v gs = 10v, i d = 14a v gs = 10v, i d = 14a, t j =125 c v gs = 4.5v, i d = 12 a 0.008 0.013 0.012 0.010 0.017 0.015 ? i d(on) on-state drain current v gs = 10 v, v ds = 5 v 50 a g fs forward transconductance v ds =...
Description N-Channel Logic Level PWM Optimized PowerTrench TM MOSFET

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    FDD6680A

Fairchild Semiconductor
Part No. FDD6680A
OCR Text ...ingle pulse, v dd = 15 v, i d =14a 200 mj i as drain-source avalanche current 56 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage ...
Description 30V N-Channel PowerTrench MOSFET

File Size 82.33K  /  5 Page

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    Sensitron Semiconductor
Part No. SHD217302A SHD217302A09
OCR Text ...: ? 100 volt, 0.16 ohm, 14a mosfet ? fast switching ? low r ds (on) ? equivalent to irf130 series maximum ratings all ratings are at t c = 25 c unless otherwise specified. rating symbol min. typ. max. u...
Description HERMETIC POWER MOSFET N-CHANNEL 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET

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    IRF7477

IRF[International Rectifier]
Part No. IRF7477
OCR Text ...@VGS = 10V 10@VGS = 4.5V ID 14A 11A S S S G 1 8 7 A A D D D D 2 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG ...
Description SMPS MOSFET

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